On July 30, 2024, SK hynix announced the launch of next-generation memory product, GDDR7, with the world’s highest performance.

SK hynix explained that GDDR is characterized by the performance specifically designed for graphic processing and high-speed property, which has gaining an increasingly more traction from global AI application customers. In response to this trend, the company completed the development of the latest GDDR7 specifications in March this year, which was now officially launched and will achieve mass production in the third quarter of this year.

SK hynix’s GDDR7 features an operating speed of up to 32Gbps (32 gigabytes per second), which represents an increase of more than 60% compared to the previous generation, and can stand at 40Gbps depending on the usage environment. Built on the latest graphics card, it can support data processing speed of over 1.5TB per second, equivalent to processing 300 FHD (5GB) movies in one second.

In addition to providing faster speeds, GDDR7 boasts an energy efficiency 50% higher than the previous generation. To address chip heating issue caused by ultra-high-speed data processing, SK hynix adopted new packaging technology in the development of this product.

SK hynix’s technical team maintained the product size while increasing the heat-dissipating layers in the packaging substrate from four to six and used highly thermally conductive epoxy molding compound (EMC) in the packaging materials. As a result, the technical team successfully reduced the thermal resistance of the product by 74% compared to the previous generation.

Lee Sang-kwon, Vice President of SK hynix DRAM PP&E, said that SK hynix’s GDDR7 has achieved the highest performance of existing memory chips with excellent speed and energy efficiency, and its applications will expand from high-performance 3D graphics to AI, HPC, and autonomous driving.

Through this product, the company will further strengthen its high-end memory product line while developing into the most trustworthy AI memory solution company for customers.

Read more

• [News] GDDR7 Emerging as a New Driver for Memory Industry
• [News] SK hynix to Kick off Mass Production for GDDR7 in Q4 2024

(Photo credit: SK hynix)

Global HBM leader, South Korea’s SK hynix, announced its financial report for the last quarter on July 25, exceeding market expectations. According to a report from Economic Daily News, the company also announced a full-scale effort to boost production of high-bandwidth memory (HBM) for AI, with this year’s capital expenditure expected to surpass initial projections. Additionally, more capacity will be allocated for HBM production.

Industry sources cited by the report also indicate that for Taiwanese manufacturers, the major global memory companies are expanding their HBM production capacity by converting existing DRAM capacity to HBM. This shift will suppress the supply of DDR4 and DDR5 DRAM, positively impacting market conditions.

Previously, as per sources cited by the Economic Daily News, it’s indicated that global memory leader Samsung plans to allocate about 30% of its existing DRAM capacity to HBM production. Now, with SK hynix reportedly making similar plans, this may benefit Taiwanese DRAM-related companies like Nanya Technology and ADATA in the future.

Reportedly, Nanya Technology is said to believe that the DRAM market has significantly improved due to the production cuts by the three major memory manufacturers—Samsung, SK hynix, and Micron—in the second half of last year, combined with the strong demand for HBM driven by generative AI. This chain reaction is spreading to various types of DRAM, and the company expects to see clear operational improvements soon.

SK hynix announced yesterday that its Q2 revenue increased by 125% year-on-year to KRW 16.4 trillion (USD 11.9 billion), setting a new record. Operating profit reached KRW 5.47 trillion, the highest since Q3 2018, significantly better than the KRW 2.9 trillion loss in the same period last year. The operating margin was 33%, exceeding expectations, mainly due to a more than 250% surge in HBM sales and an overall increase in DRAM and NAND chip prices.

SK hynix plans to begin mass production of the next-generation 12-layer HBM3e chips this quarter, enhancing its competitive edge over rivals Samsung and Micron in the design and supply of advanced memory for NVIDIA’s AI accelerators. HBM3e is expected to account for about half of all HBM chip sales this year. Additionally, capital expenditure for this year is likely to exceed initial expectations.

SK hynix predicts that the overall memory market will continue to grow in the second half of the year, with DRAM and NAND chip supply becoming tighter and demand for AI servers remaining strong.

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• [News] AI Boosts HBM Demand, SK Hynix’s Q2 Profits Reach Six-Year High
• [News] SK hynix, TSMC, and NVIDIA Reportedly Forge Alliance to Develop Next-Generation HBM

(Photo credit: SK hynix)

According to a previous report from Bloomberg, Chinese 3D NAND Flash giant YMTC recently filed a lawsuit against American memory giant Micron in California, accusing Micron of infringing on 11 of its patents related to 3D NAND Flash and DRAM products. YMTC is requesting the court to order Micron to stop selling the infringing memory products in the United States and to pay patent royalties.

Established at the end of 2016 in Wuhan, YMTC is a major Chinese manufacturer of memory (DRAM) and flash memory (NAND Flash), supported by significant investments from the “Big Fund.” It has become a representative enterprise in China’s effort to build a local chip supply chain. However, in October 2022, the U.S. Department of Commerce added YMTC to the Entity List, preventing it from obtaining advanced equipment from U.S. companies to manufacture 3D NAND chips with 128 layers or more.

Before facing U.S. export controls, YMTC’s 128-layer 3D NAND chip products had already entered Apple’s supply chain and received technical and quality certification from Apple. At that time, Apple reportedly hoped to use YMTC’s chips not only for cost considerations but also to prevent flash memory from being overly concentrated in the hands of Samsung, SK Hynix, and Micron.

The report from Tom’s hardware states that YMTC’s current allegations assert that Micron’s 96-layer (B27A), 128-layer (B37R), 176-layer (B47R), and 232-layer (B58R) 3D NAND Flash products, as well as some DDR5 SDRAM products (Y2BM series), infringe on 11 of YMTC’s patents or patent applications filed in the United States.

Notably, last November, YMTC also filed a lawsuit against Micron and its subsidiaries in the U.S. District Court for the Northern District of California, accusing them of infringing on eight U.S. patents related to 3D NAND Flash. Additionally, per a report from South China Morning Post on June 7th of this year, YMTC filed a lawsuit in California, accusing the Denmark-based consulting firm Strand Consult, funded by Micron, of spreading false information that damaged YMTC’s market reputation and business relationships.

Industry sources cited by the Commercial Times also note that in recent years, China’s technological capabilities have significantly improved, and companies have been actively applying for patents domestically and internationally. With the support of the Chinese government, they have also started to frequently engage in patent litigation. Last year, Chinese courts received 5,062 technical intellectual property and monopoly cases.

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• [News] U.S. Department of Commerce Introduces New Regulations to Restrict China from Training AI Using U.S. Cloud Services
• [News] New Focus in the US-China Tech War! Can China Overtake with Silicon Photonics?

(Photo credit: YMTC)

According to a report by Yonhap News Agency, data released by Korea’s Ministry of Science and information and communication technology ICT on July 15 shows that in the first half of this year, Korea’s ICT industry exports grew by 28.2% YoY to USD 108.85 billion, setting the second-highest record for the same period in history.

Fueled by demands in the AI, IT information technology, and telecommunications equipment markets, semiconductor exports, one of Korea’s main export products, surged by 49.9% YoY, reaching USD 65.83 billion.

On a market segment basis, Korea’s memory exports in the first half of the year saw a hike of 88.7% YoY, driven by increased exports of products like high bandwidth memory (HBM).

Due to increased investment in server and data center as well as increased demand for personal computer and other devices, exports of computers and peripheral devices rose by 35.6% YoY; instead, mobile phone exports decreased by 2.8% YoY to USD 5.58 billion.

In June, ICT exports grew by 31.1% YoY, reaching USD 21.05 billion, the highest value for the same month in history. Semiconductor exports were USD 13.44 billion, also setting a record high for the same month. Notably, memory chip exports soared by 85.2% YoY, reaching USD 8.83 billion.

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• [News] Korean Semiconductor Equipment Maker Develops ALD Technology to Reduce EUV Process Demand
• [News] Korean Advanced Packaging Industry’s Rise Delayed by TSMC and ASE Expansion

(Photo credit: SK Hynix)

Amid the rising memory market prices and the continuously improving supply-demand balance, original manufacturers (OEMs) have seen their business performance steadily climb, generally achieving a turnaround from losses to profits.

Meanwhile, memory module manufacturers have also enjoyed rapid growth in their performance. With strong support from AI, memory manufacturers are optimistic about future market conditions, with some even stating that 2025 will be a significant upward cycle year for the memory industry.

• OEM and Module Manufacturers Recorded Strong Financial Results

Recently, two OEMs, Micron and Winbond, have disclosed their latest financial data.

Micron’s financial report for the period from March to May 2024 shows that the company’s revenue for the quarter was USD 6.811 billion, an 81.5% increase YoY. Non-GAAP operating income was USD 941 million, and net income was USD 702 million, a 47% increase QoQ. Specifically, Micron’s DRAM revenue was approximately USD 4.7 billion, a 13% increase QoQ, while its NAND business revenue was approximately USD 2.1 billion, a 32% increase QoQ.

The average selling prices (ASP) for both DRAM and NAND increased by more than 20% QoQ. Micron stated that its revenue, gross margin, and earnings per share for the quarter exceeded the upper limit of its guidance range. Looking ahead to next quarter, Micron expects its revenue to reach USD 7.4-7.8 billion.

Winbond’s self-clearing revenue report for June 2024 shows that consolidated revenue for June was TWD 7.378 billion, a 5.56% increase YoY; the cumulative consolidated revenue for January to June was TWD 41.605 billion, a 14.53% increase YoY.

In terms of memory module manufacturers, companies such as Adata, Phison, and Team Group all reported year-on-year revenue growth for June and the first half of the year. Adata’s revenue for June reached TWD 2.954 billion, a year-on-year increase of over 29.38%, with a cumulative consolidated revenue of TWD 20.91 billion for the first half of this year, up by 48.56% YoY. Team Group’s revenue for June was TWD 2.796 billion, a 44.93% increase YoY, while Phison’s revenue was TWD 5.361 billion, a 55.93% increase YoY, both setting new monthly revenue records.

BIWIN and TWSC recently disclosed announcements expecting substantial year-on-year growth in net profit for the first half of 2024. BIWIN expects net profit after deducting non-recurring gains and losses to be CNY 275-325 million, a year-on-year increase of 191.12-207.69%. TWSC expects operating revenue to be CNY 2-2.3 billion, a year-on-year increase of 238.68-289.48%.

• Memory Companies Anticipate an Upward Trend in 2025

Both OEMs and module manufacturers hold positive attitudes towards the outlook for future memory market.

Micron, as one of the three major DRAM manufacturers, has seen its HBM business grow by leaps and bounds in recent years, greatly benefited from the AI wave. Therefore, Micron is steadfastly optimistic about the potentials of AI and HBM. Micron expects to generate several hundred million dollars in revenue from HBM in fiscal 2024, which is expected to reach several billion dollar in fiscal 2025. Additionally, Micron reiterated that HBM has been in tight supply, and its HBM memory chips have already sold out for 2024 to 2025.

Winbond Chairman Arthur Chiao noted that Winbond began to see a decline in memory sales since 2Q22 and signs of sales increase in 2Q24 after eight quarters. He expects sales volume to rise, followed by price increase. He positively predicts that the industry will enter an upward cycle over the next two years, and 2025 will experience remarkable growth. To sum up, he views the market outlook for next year as optimistic.

Adata Chairman Simon Chen emphasized that upstream manufacturers currently have a very positive and proactive attitude towards prices. The allocation of production capacity is prioritized for HBM with the highest gross margin, followed by general-purpose DDR5 and DDR4. Capital expenditures are also profit-oriented.

As a result, short-term spot price fluctuations do not affect the continuous and stable upward trend of DRAM and NAND Flash contract prices in the third quarter. Moreover, some DRAM spot prices have started to rebound recently. He is optimistic that after a short-term adjustment in the spot market, the company’s shipments will return to a growth trajectory as the coming of the traditional peak season in 2H24.

• NAND Flash Price Increase to Shrink in 3Q24

It’s worth noting that although memory manufacturers are generally optimistic about the future market, and the AI development has indeed boosted demand for products such as servers, HBM, and enterprise SSD, the downstream terminal application market has not yet fully recovered.

Meanwhile, the active moves in expanding production by original manufacturers may lead to changes in the future supply-demand balance. These factors suggest that the increase in some product contract prices in the future memory market may shrink.

TrendForce reports that a recovery in demand for general servers—coupled with an increased production share of HBM by DRAM suppliers—has led suppliers to maintain their stance on hiking prices. As a result, the ASP of DRAM in the third quarter is expected to continue rising, with an anticipated increase of 8–13%. The price of conventional DRAM is expected to rise by 5–10%, showing a slight contraction compared to the increase in the second quarter.

In terms of NAND Flash, TrendForce indicates that industry companies will continue to invest in server construction, and particularly, enterprise SSD will see order increase as a result of the expansion of AI adoption, while consumer electronics demand remains weak. In addition, original manufacturers tend to be active in expand production in 2H24. As a whole, the sufficiency ratio of NAND Flash supply will rise to 2.3% in the third quarter, and the blended NAND Flash price increase will converge to 5-10%.

Looking at the price trend of NAND Flash this year, the price of NAND Flash accelerated to rebound as original manufacturers remained conservative in production increases in 1H24, which enabled them to return to profitability.

However, as manufacturers significantly expand production in 2H24, and retail market demand has still not recovered yet, the decline in wafer spot prices has widened, with some wafer prices falling more than 20% below contract prices. This presents a challenge for the future increase in wafer contract prices.

Read more

• [News] Memory Utilization Rate Near Full Capacity, Surpassing Mature Nodes Foundries
• [News] Memory Market Recovery is Near, as Winbond Expects a Good Year in 2025

(Photo credit: Micron)