TSMC’s fab in Kikuyo, Kumamoto Prefecture, Japan (Kumamoto Fab 1) is expected to begin mass production by the end of 2024, with plans for a second fab in the region. Thus, the influence of TSMC’s presence continues to expand, as per the latest estimates from local financial institutions.

Over the next decade, from now until 2031, the economic spillover effect of TSMC’s operations in Kumamoto is projected to surpass 10 trillion yen, marking a 60% increase from a previous estimate in August 2023.

According to a report from Nikkei citing Kyushu Financial Group (Kyushu FG), a new impact estimate has been released on September 5, showing that TSMC’s operations in Kumamoto Prefecture are projected to generate an economic spillover effect of approximately JPY 11.2 trillion over the next 10 years, until 2031.

This marks a 60% increase from the previous estimate of JPY 6.9 trillion published in August 2023. The projected impact on Kumamoto Prefecture’s GDP over the same period has also risen from JPY 3.4 trillion to JPY 5.6 trillion.

Reportedly, the previous estimate from Kyushu FG last August only considered the benefits of TSMC’s Kumamoto Fab 1. The latest report, however, includes the planned construction of the Kumamoto Fab 2 in its evaluation.

The upward revision is attributed to the expanded magnetic pull of TSMC’s Kumamoto operations (both fabs). The number of companies expected to set up or invest in the region has increased to 171, roughly double the previous estimate.

Initially, the first Kumamoto fab attracted strong interest from suppliers like Sony and Mitsubishi Electric. Following TSMC’s announcement in February to build a second fab, further investments are expected, not only from within Kumamoto but also from other prefectures and overseas suppliers, particularly from Taiwan.

Additionally, the economic impact is expected to extend to wage levels in Kumamoto Prefecture, with an estimated increase of JPY 380,000 in per capita annual income.

Meanwhile, as stated in an report from Bloomberg on May 11th, Kumamoto’s newly appointed governor, Takashi Kimura, once claimed that he would spare no effort to persuade TSMC to establish a third fab in the region.

In addition, a recent report from Kyodo News citing the interview with Taiwanese Minister of Economic Affairs J.W. Kuo has also hinted that TSMC plans to build a third fab in Japan, but with a projected timeline after 2030.

If the third fab is realized, the economic spillover effect is anticipated to expand further.

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• [News] TSMC to Build Third Fab in Japan? The Timing May Be Reportedly after 2030
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(Photo credit: JASM)

To revitalize its domestic semiconductor chip industry, Japan has launched several measures in recent years, including financial subsidies. According to Japanese media reports, many Japanese companies will invest JPY 5 trillion (Around USD 30.96 billion) to develop the semiconductor business.

Nikkei Asia reported on July 8 that eight Japanese companies, including Sony, Mitsubishi Electric, Rohm, Toshiba, Kioxia, Renesas, Rapidus, and Fuji Electric, will invest JPY 5 trillion in the semiconductor field by 2029, driven by the promising prospects of AI, EV, and carbon reduction markets.

As per Nikkei News, based on the capital investment plans from the fiscal 2021 to 2029 of these manufacturers, in order to rejuvenate Japan’s domestic chip industry, these companies will increase their investments in power semiconductor, sensor, and logic chip fields, which are seen as core technologies to the burgeoning sectors such as AI, decarbonization, and EV.

Among these, Sony plans to invest about JPY 1.6 trillion from fiscal 2021 to 2026 to ramp up its CMOS image sensor production capacity. Sony is a globally renowned image sensor manufacturer, and its chip business head, Terushi Shimizu, previously predicted that Sony’s market share in the global image sensor market would reach 60% by the new fiscal year starting April 2025.

In December 2023, Sony held a completion ceremony for the expansion project at its Nagasaki Technology Center (Isahaya City, Nagasaki Prefecture), which produces image sensors. Sony also announced the plan to build a new image sensor production plant in Kumamoto Prefecture, matching the need to expand the Nagasaki plant to improve its supply system. Nikkei News reported in 2022 that Sony planed to invest several hundred billion yen in the new Kumamoto plant to produce smartphone image sensors, with construction expected to start as early as 2024 and production in 2025.

Toshiba and Rohm, positive about the expanding demand for AI data center and the EV market, project to jointly invest about JPY 380 billion to increase the production of silicon (Si) and silicon carbide (SiC) power semiconductors.

In December 2023, Toshiba announced that it had reached an agreement with Rohm to collaborate on manufacturing power devices. Both companies are expected to make efficiency investment totaling JPY 388.3 billion in silicon (Si) and silicon carbide (SiC) power devices fields, aiming to significantly strengthen their supply capacity and complement each other’s production capabilities.

Rohm plans to build a new plant in Miyazaki Prefecture on Kyushu Island and will allocate JPY 289.2 billion in silicon carbide wafer production. Toshiba will invest nearly JPY 100 billion to set up a cutting-edge 300mm wafer manufacturing plant in Ishikawa Prefecture, central Japan.

Mitsubishi Electric plans to invest JPY 100 billion to build a new factory in Kumamoto Prefecture to produce silicon carbide power semiconductor, expected to commence operation in April 2026. Mitsubishi Electric aims to increase its SiC power semiconductor production capacity to five times the 2022 level by 2026. Mitsubishi Electric President Kei Urishima stated, “We will establish a system capable of rival global leader Infineon.”

In 2022, Renesas announced a plan to invest JPY 90 billion to convert its previously closed Kofu factory into a 12-inch wafer plant to meet the growing demand in the power semiconductor field. On April 11 this year, the factory officially resumed operations. Renesas previously estimated that the factory would start mass-producing IGBT and power MOSFET devices in 2025, doubling the company’s overall power semiconductor production capacity.

As to logic semiconductor industry, Japan’s new semiconductor player Rapidus plans to produce 2nm chip in Hokkaido, with a total investment of JPY 2 trillion, of which the Japanese government decided to subsidize JPY 920 billion. Rapidus plans to start trial production of 2nm logic chip in April 2025 and achieve large-scale mass production by 2027.

To capitalize on the expanding opportunities in artificial intelligence (AI), electric vehicles (EV), and the carbon reduction market, eight Japanese companies, including Sony and Mitsubishi Electric, plan to invest JPY 5 trillion (around USD 30 billion) in semiconductors. According to a report by Nikkei on July 8, this investment is expected to increase the production of image sensors, power semiconductors, logic semiconductors, and other products.

Reportedly, eight Japanese companies, including Sony, are planning to invest JPY 5 trillion in semiconductors by 2029, driven by the optimistic outlook for the AI and carbon reduction markets. The report compiled by Nikkei surveys the equipment investment plans of eight major Japanese semiconductor manufacturers for the period from 2021 to 2029: Sony, Mitsubishi Electric, Rohm, Toshiba, Kioxia, Renesas, Rapidus, and Fuji Electric.

The report indicates that Sony will invest roughly JPY 1.6 trillion from 2021 to 2026 to increase the production of CMOS image sensors and other products, with plans to build a new factory in Kumamoto Prefecture. Additionally, Japanese manufacturers are expanding the production of power semiconductors in response to the growing AI data center and EV markets.

Toshiba and Rohm plan to invest a combined total of around 380 billion yen to increase production of silicon (Si) and silicon carbide (SiC) power semiconductors. Mitsubishi Electric aims to increase its SiC power semiconductor capacity to five times the 2022 level by 2026 and will invest about 100 billion yen to build a new factory in Kumamoto Prefecture. Mitsubishi Electric President Kei Urushima stated that they aim to establish a system capable of competing with its rival Infineon, which is the global leader in the SiC power products.

Reportedly, Japanese semiconductor companies held a 50% global market share in 1988. However, after the 1990s, they lost the competition to Taiwanese and South Korean manufacturers, leading to their withdrawal from advanced process research and development in the early 2000s. By 2017, Japan’s market share had fallen below 10%.

In recent years, the Japanese government has been actively revitalizing the semiconductor industry. In the field of advanced logic semiconductors necessary for AI, the Japanese government has decided to provide up to 920 billion yen in support to Rapidus. Rapidus plans to begin trial production of 2-nanometer chips in April 2025 and commence mass production in 2027.

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(Photo credit: Mitsubishi Electric)

On March 27, Wolfspeed announced the topping out of construction at the its largest and most advanced John Palmour Manufacturing Center for Silicon Carbide.

According to its introduction, the “John Palmour Silicon Carbide Manufacturing Center” has a total investment of USD 5 billion, covering 445 acres. The first phase of construction is expected to be completed by the end of 2024. Wolfspeed CEO Gregg Lowe stated that the factory has begun installing ingot equipment, and it is estimated that production will start in December 2024 or January 2025.

The factory will mainly produce 200mm (8-inch) silicon carbide wafers, which are 1.7 times the size of 150mm (6-inch) wafers. This will meet the demand for the next generation of semiconductors critical for energy transformation and AI artificial intelligence.

It is reported that the ramp-up of the “John Palmour Silicon Carbide Manufacturing Center” will provide support for customers like Renesas and Infineon. Currently, Wolfspeed manufactures over 60% of the world’s silicon carbide wafer at its headquarters in Durham, North Carolina. It is worth mentioning that, Wolfspeed is carrying out a capacity expansion plan with a total investment of USD 6.5 billion.

In recent years, driven by the burgeoning development in applications such as new energy vehicles, 5G, solar energy, and photovoltaics, the demand for silicon carbide has shown explosive growth. According to previous data statistics from TrendForce, the overall market size of silicon carbide power device reached USD 2.28 billion in 2023 with 41.4% YoY, which is expected to stand at USD 5.33 billion by 2026.

Given the promising market prospects, major silicon carbide-related companies worldwide are accelerating their strategic deployments. Recently, reports of investments and progress in various silicon carbide industry projects.

Globally, Mitsubishi Electric is scheduled to open a new 8-inch SiC plant in Japan in April this year, and plans to put it into operation in 2026. European graphite materials and silicon carbide substrate supplier Mersen is expanding its silicon carbide substrate production capacity by obtaining investment from the French government.

In China, SICC announced to spend CNY 500 million to invest in “Silicon Carbide Semiconductor Materials Project”. TANKEBLUE’s silicon carbide project completed the second phase of the main body; Ascen Power steps up the production of its silicon carbide wafer manufacturing project phase I.

On the other hand, the joint venture of San’an and Li Auto has started pilot production of its  automotive-grade silicon carbide wafer and module project with a total investment of 1 billion; a large-size silicon carbide single crystal substrate industrialization project signed in Lishui, Zhejiang, China. Nantong Semiconductor Equipment SiC components project started the second phase. TonyTech intend to expand the 6-inch silicon carbide substrate materials project with a capacity of 200,000 pieces annually.

Cases of collaboration between enterprises frequently came up since 2024. For instance, Infineon has signed a long-term contract with SK Siltron for silicon carbide wafer, Innosilicon and STMicroelectronics have signed a silicon carbide strategic cooperation agreement in Shenzhen of China, the same as United Nova Technology and Li Auto.

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• [News] Continuous Breakthroughs in SiC Substrates, Global 8-Inch Fab to Reach 11

(Photo credit: Mitsubishi Electric)

Benefited from robust demand in downstream application markets, the silicon carbide (SiC) industry is in high gear. According to TrendForce, the SiC power device market is expected to reach USD 5.33 billion by 2026, with its mainstream applications still highly reliant on electric vehicles and renewable energy sources.

Recently, the widely-publicized SiC market has seen new developments involving companies such as Mitsubishi Electric, Mersen, and Ascen Power.

• Mitsubishi Electric to Begin Construction of SiC Fab in April

According to recent reports from Nikkei, Mitsubishi Electric plans to commence construction of a new 8-inch SiC fab in Kumamoto Prefecture, Japan, in April 2024, with operations scheduled to start in April 2026.

In March 2023, Mitsubishi Electric announced the plan to invest approximately JPY 100 billion (Around CNY 4.856 billion) over five years to construct an 8-inch SiC fab and enhance related production facilities. The fab is projected to kick-start operation in April 2026.

The new fab, spanning six floors with a total floor area of around 42,000 square meters, will primarily handle front-end processes for 8-inch SiC wafers. Mitsubishi Electric will introduce an automated transport system across all processes to create a highly efficient production line and plans to gradually increase capacity, aiming to increase SiC production capacity by five times by the fiscal year 2026 (compared to fiscal year 2022).

In May 2023, Mitsubishi Electric signed a MOU with Coherent to supply 8-inch n-type 4HSiC wafers for the new factory. Both parties are committed to expanding the production scale of 8-inch SiC devices.

• Ascen Power Accelerates Phase One Capacity Ramp-up of SiC Chip Manufacturing Project

Recently, Shao Yonghua, the plant manager of Ascen Power’s fab, introduced that the entire fab is currently ramping up capacity, with the planned capacity of producing 240,000 pieces of 6-inch automotive-grade SiC chips annually expected to be achieved by the end of this year.

The reserved 8-inch production line is adjacent to the 6-inch line and will have the capability to produce 240,000 pieces of 8-inch automotive-grade SiC chips annually once completed.

As previously reported, Ascen Power’s SiC chip manufacturing project is a major project under Guangdong’s “Strengthening Chip Technology Project,” with a total investment of CNY 7.5 billion, covering an area of 150 acres.

The first phase involves an investment of CNY 3.5 billion to build a production line capable of producing 240,000 pieces of 6-inch SiC chips annually, with the second phase focusing on establishing a production line capable of producing 240,000 pieces of 8-inch SiC chips annually. The products include IGBTs, SiC SBD/JBS, SiC MOSFETs, targeting applications including new energy vehicles, photovoltaics, smart grids.

In November 2022, the project’s clean room was officially put into use, achieving a monthly production capacity of 10,000 pieces. Its automotive-grade and industrial-grade chips have been successfully mass-produced and sampled, and these chips are about to complete the automotive verification. Up to now, Ascen Power has signed agreements with more than 40 customers and achieved tape-out, covering most SiC chip design companies nationwide.

• Mersen To Rev up SiC Wafer Production

On March 12, European graphite materials and silicon carbide wafer supplier Mersen announced that it has received investment from the French government for capacity expansion of its SiC wafer project. The subsidy amount may exceed Euro 12 million (Approximately CNY 94 million), sourced from the “France 2023 Plan”—a significant joint interest project in microelectronics and communication technology in Europe.

Mersen stated that they intend to advance the research and industrial production of p-SiC wafers with this investment. p-SiC is a low-resistivity polycrystalline SiC wafer that can be combined with single-crystal SiC active layers, enabling SiC device manufacturers to improve production yield and transistor performance.

Mersen expects to invest Euro 85 million (Approximately CNY 670 million) between 2023 and 2025, employ 80 to 100 staff, promote capacity construction at the Gennevilliers plant in France, and accomplish a potential manufacturing capacity of 400,000 wafers (150mm) by 2027.

Additionally, Mersen will supply SiC wafers to Soitec. In November 2021, two sides entered into a strategic partnership to jointly develop polycrystalline SiC wafers with extremely low resistivity for SiC power electronic components based on Soitec SmartSiC technology, leveraging their respective expertise in substrates and materials.

Read more

• [News] Continuous Breakthroughs in SiC Substrates, Global 8-Inch Fab to Reach 11

(Photo credit: Mitsubishi Electric)