In recent years, data center has been one of the key areas for GaN (Gallium Nitride) manufacturers to tap power electronics market, and GaN applications in the data center power supply market have taken a big step forward. Notably, the rise of AI technology has further fueled this market at present.

In the AI ecosystem, data centers have enormous demands for high-speed computing and power. According to a TrendForce report, NVIDIA’s Blackwell platform will be officially launched in 2025, replacing the existing Hopper platform, and will become NVIDIA’s primary solution for high-end GPU, accounting for nearly 83% of all high-end products.

For high-performance AI servers like the B200 and GB200, a single GPU can consume more than 1,000W of power.

Facing soaring power demands, the power specifications for each data center rack will increase from 30-40kW to 100kW, posing significant challenges for data center power systems. The combination of GaN and liquid cooling technologies will be critical to improving energy efficiency in AI data centers.

The hike in chip power consumption requires servers to achieve higher power density and efficiency.

GaN, which reduces energy losses and increases power density, is now seen as one of the key technologies for optimizing energy efficiency in AI data centers, which has attracted many players, including Infineon, Texas Instruments (TI), Navitas, Innoscience, Transphorm, CorEnergy, Danxi Tech, and GaNext, to join the race.

Among them, both Navitas and Infineon have unveiled their AI data center power roadmaps.

Infineon’s AI Data Center Power Roadmap (Source: Infineon)

Combining the unique advantages of Si (Silicon), SiC (Silicon Carbide), and GaN (Gallium Nitride), Infineon has launched a 3 kW PSU and a 3.3 kW PSU, with an 8 kW PSU expected to be available in the first quarter of 2025.

The new 8 kW PSU will support AI racks with outputs of up to 300 kW or more. Compared to the 32 W/in³ density of the 3 kW PSU, its efficiency and power density will increase to 100 W/in³, further reducing system size and lowering operator costs.

In terms of GaN technology, Infineon’s CoolGaN™ solution can provide over 99% system efficiency in PFC topologies. Moreover, GaN Systems, acquired by Infineon, already released a 3.2kW AI server power supply as early as 2022 and unveiled its fourth-generation GaN platform in 2023.

The new platform achieves efficiency exceeding the Titanium level, with power density increased from 100W/in³ to 120W/in³. Thereby, the industry highly expects the synergistic effect created by the combination of these two companies.

Navitas introduced its GaNSafe™ and Gen-3 Fast SiC technology last year, along with a 4.5kW CRPS design, achieving more than double the power density of traditional silicon solutions. In July this year, Navitas unveiled its CRPS185 4.5kW AI data center server power solution, with a power density of 137W/in³ and over 97% efficiency.

Navitas AI Data Center Power Roadmap (Source: Navitas)

Navitas revealed that over 60 customer projects involving 3.2kW and 4.5kW power solutions for data centers are currently under development.

These projects are expected to bring millions of dollars in revenue growth for Navitas’ GaN and SiC business between 2024 and 2025. It aims to begin small-scale production of AI data center power solutions in 2024.

Aside from Infineon and Navitas, other manufacturers like TI, EPC, CorEnergy, GaNext, and Innoscience also set sights on this market.

TI reached an agreement with Delta, the world’s largest server power supply provider (with nearly 50% market share), as early as 2021. Based on GaN technology and TI’s C2000™ MCU real-time control solution, they are developing high-efficiency, high-power server PSU for data centers.

Thus, their joint efforts and future fruit in the AI server power market are highly anticipated.

Beyond AI data center server, humanoid robot industry that enjoys burgeoning growth this year, also injects new vitality into the GaN market.

Humanoid robot is assembled by sensing, control, motor, and battery systems, in which GaN can has its place in LiDAR system, motor drive, DC-DC converter, and battery BMS, among which motor drive plays a critical role.

According to TrendForce, the demand for motor driver in humanoid robot has skyrocketed due to the mounting demands for degrees of freedom.

To achieve higher power output, high-power-density, high-efficiency, and fast-response motor driver are in demand, and GaN is a perfect fit for it, which also has the ability to strengthen overall robot performance in terms of heat management, compact design, and overall system design.

It is reported that Siemens, Yaskawa Electric, and Elmo have already integrated GaN technology into their robotic motors, and the GaN industry chain is gearing up for seizing more opportunities.

Currently, companies such as TI, EPC, Transphorm, Innoscience, Navitas, and CorEnergy are actively promoting GaN adoption in motor drive market. Among them, Transphorm has supplied GaN FET products for Yaskawa Electric’s new servo motor.

TrendForce points out that future robots will exceed our imagination, with precise, fast, and powerful movement capabilities as the key parts, which will inevitably push the motors required to drive these movements advance forward, and this is regarded as a boon for GaN technology.

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(Photo credit: Infineon)

According to TrendForce’s “2024 Global GaN Power Device Market Analysis Report”, the development of the GaN power device industry is expected to accelerate once again as Infineon and Texas Instruments allocate more resources into GaN technology.

In 2023, the market size of global GaN power device was around USD 271 million, and it is projected to grow to USD 4.376 billion by 2030 at a compound annual growth rate (CAGR) of 49%.

Notably, the proportion of non-consumer applications is expected to increase from 23% in 2023 to 48% by 2030, with automobile, data center, and motor drive being the core application scenarios.

• GaN Expected to Make Great Difference in Reducing Heat and Improving Efficiency in AI Era

The evolution of AI technology has driven the continuous increase in computing power demand, making the power consumption of CPU and GPU an increasingly striking issue. To meet the requirements of more advanced AI computations, server power supply is required to further enhance efficiency and power density, and thus, GaN has emerged as a key solution.

Delta, the world’s largest server power supply provider, holds nearly 50% of the market share. Observing the advancement of its server power supplies, the power density has increased from 33.7W/in³ to 100.3W/in³ over the past decade, while power levels has reached 3.2kW and even 5.5kW, and the next generation is expected to exceed 8kW.

TrendForce’s research indicates that AI server is expected to account for 12.2% of overall server shipment in 2024, an increase of ~3.4% from 2023, while the annual growth rate for general server shipment is only 1.9%.

In face of such an attractive opportunity, both Infineon and Navitas Semiconductor have announced technical roadmaps for AI data center this year.

Infineon highlights the significant advantages of combining liquid cooling technology with GaN at lower junction temperature, which will enable data center to maximize efficiency, meet the growing power demands, and overcome the challenges posed by server heat increase.

• Potential of GaN’s High-Frequency Characteristics can be Fully Tapped in Motor Drive Applications

In motor drive applications like robotics, the potential of GaN is gradually emerging. Compared to industrial robots, humanoid robots have a significantly higher degree of freedom (DoF), greatly increasing the demand for motor drivers.

It’s learned that the joint modules of humanoid robots bear the main tasks of exertion and braking. To achieve higher explosive power, motor drivers with high power density, high efficiency, and high responsiveness are needed. As a result, GaN has attracted market attention, especially in load-bearing areas like the legs.

Texas Instruments and EPC (Efficient Power Conversion) have been dedicated to driving GaN’s application in the motor drive field, drawing new players into the market.

Robotics is expected to embrace a future beyond imagination, where precise, fast, and powerful motion capabilities are crucial, and the motors driving these movements will inevitably advance forward, which will be a boon for GaN.

• GaN Provides New Solutions for Automotive Power Electronics

While SiC thrives in the automotive industry, GaN is also gaining traction in this field, with on-board chargers (OBC) considered the best entry point.

The first automotive-grade GaN power product meeting AEC-Q101 standard was released by Transphorm (now Renesas) in 2017, and several manufacturers have since introduced a wide range of automotive-grade products so far.

Overall, although GaN still faces several technical challenges in entering inverter and OBC power system, it is believed that with continuous investment from major automotive chip companies like Infineon and Renesas, GaN will soon become a key component in automotive power systems.

• Consumer Electronics Remain the Main Applications for GaN

Consumer Electronics still holds the biggest proportion among GaN power device applications, in which GaN’s footprint is quickly expanding from fast chargers to home appliances and smartphones.

Specifically, GaN has been widely adopted in low-power smartphone fast chargers, and next will enter into more demanding applications like notebook and home appliance power supplies. Other potential consumer applications include Class-D audio, smartphone over-voltage protection (OVP), etc.

TrendForce believes that GaN power device industry is at a critical breakthrough moment, with several potential applications simultaneously boosting rapid growth.

Moreover, new structures and processes are expected to be introduced in built on better reliability to get into more complex high-power, high-frequency scenarios, injecting new momentum into the industry.

In terms of industry development and market landscape, Fabless companies have been particularly active in the past.

However, as the industry continues to consolidate and the application markets gradually open up, traditional IDM (integrated device manufacturer) giants are expected to gain significant influence, bringing new major changes to the future landscape of the industry.

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(Photo credit: Infineon)

According to TrendForce’s “2023 GaN Power Semiconductor Market Analysis Report – Part 1,” the global GaN power device market is projected to grow from $180 million in 2022 to $1.33 billion in 2026, with a compound annual growth rate of 65%.

The development of the GaN power device market is primarily driven by consumer electronics, with a focus on fast chargers as the core application. Other consumer electronic scenarios include Class D audio and wireless charging.

However, many manufacturers have already shifted their focus to the industrial market, with data centers being a key application. ChatGPT has sparked a wave of AI cloud server deployment, and GaN technology will help data centers reduce operating costs and improve server efficiency.

Simultaneously, the automotive market is also gaining attention, as OEMs and Tier 1 suppliers recognize the potential of GaN. It is expected that by around 2025, GaN will gradually penetrate low-power onboard chargers (OBC) and DC-DC converters. Looking further ahead to 2030, OEMs may consider incorporating GaN technology into traction inverters.

In terms of market competition, based on GaN power device business revenue, Power Integrations ranked first in 2022. The company has been leading the high-voltage market’s development since 2018, and its excellent GaN integrated solutions have gained wide market recognition. Other leading manufacturers include Navitas, Innosic, EPC, GaN Systems, and Transphorm.

Additionally, the industry paid attention to the acquisition of GaN Systems by Infineon. According to TrendForce’s statistics, the combined market share of both companies was approximately 15% in 2022.

Turning to the supply chain, as mentioned earlier, the development of the GaN power device market will be driven by consumer electronics for a long time. Therefore, the industry must pursue scale and low cost, necessitating the expansion of wafer sizes. Currently, mainstream GaN power wafers still rely on 6-inch silicon substrates, with only Innosic, X-FAB, and VIS offering 8-inch options. With a positive outlook for the long-term development of the GaN power market, several wafer manufacturers have announced plans to shift to 8-inch wafers in the coming years, including Infineon, STMicroelectronics, TSMC, and others.

Furthermore, Samsung recently announced its entry into the 8-inch market and plans to provide foundry services starting from 2025, a development worth industry attention.

(Photo credit: Navitas)

Apple recently unveiled its 140W MagSafe charger for the new MacBook Pro, marking the first time that Apple is adopting GaN technology. As such, 100+ watt fast charge products have thus entered a period of growth, in turn accelerating the adoption of third-generation semiconductor devices in consumer applications, according to TrendForce’s latest investigations. While GaN power transistor prices have dropped to nearly US$1 as of now, and GaN fast charge technologies continue to mature, TrendForce expects GaN solutions to reach a 52% penetration rate in the fast charge market in 2025.

TrendForce also indicates that the vast majority of GaN fast chargers’ peak power fell within the 55W-65W range in 2020. GaN fast chargers with 55W-65W of peak power accounted for 72% of all GaN fast charger sales last year, with 65W being the mainstream, whereas GaN fast chargers with 100W and more in peak power accounted for only 8%. Even so, the outlook for these high-power fast chargers appears relatively promising, as more and more companies release their own high-power fast chargers in response to consumers’ increasing energy consumption demand. Fast chargers with a peak power of 140W are the most powerful solution currently available.

Within the 100+ watt product category, GaN fast chargers have reached a penetration rate of 62%. These chargers are primarily supplied by Navitas and Innoscience. With a market share of more than 70%, Navitas’ GaN chips are used in products from Baseus, Lenovo, and Sharge, among others. On the other hand, PFC+LLC combo controllers have become the mainstream solution for 100+ watt fast chargers as these controllers allow for higher efficiency and smaller physical dimensions. The combination of SiC diodes and GaN switches results in increased PFC (power factor correction) frequency. As such, major manufacturers have quickly adopted the GaN+SiC wide bandgap semiconductor combo for their fast chargers.

For instance, Baseus released the world’s first ever 120W GaN (supplied by Navitas) + SiC (supplied by APS) fast charger in 2020 and saw excellent reception from the market. SiC power device suppliers, including Global Power Technology, Maplesemi, and onsemi, have also been ramping up their shipments to PD (power delivery) fast charger manufacturers. It should be pointed out that the fast charge interface has gradually become a standard feature in cars. In light of the rise of the high-power in-car charging market, the power consumption and maximum battery capacity of electronic products will propel the widespread application of third-generation semiconductors, including GaN and SiC, going forward.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

Demand for fast chargers used for various consumer electronics has been quickly rising. For instance, smartphone brands such as Xiaomi, OPPO, and Vivo led the industry by releasing fast chargers in 2018, subsequently gaining consumer acceptance via their fast chargers’ competitive advantages in cooling efficiency and compact physical dimensions. At the moment, notebook computer manufacturers are also expressing a willingness to adopt fast charging technology. Hence, the GaN power devices segment became the fastest-growing category in the third-generation semiconductor industry. TrendForce expects annual GaN power devices revenue for 2021 to reach US$83 million, an impressive 73% YoY increase.

Regarding the ranking of GaN power devices suppliers, Navitas is projected to obtain a 29% market share (measured by total shipment) and overtake Power Integration for the top position this year. Thanks to Navitas’ proprietary GaNFast power IC design and great relationships with its partners in the semiconductor supply chain, it has become the largest supplier of GaN power IC chips in the consumer electronics markets. The company is currently partnering with leading global smartphone and PC OEMs, including Dell, Lenovo, LG, Xiaomi, and OPPO. Given the rising demand for Navitas’ fast charge ICs from clients this year, the company is expected to transition its chip orders in 2H21 from TSMC’s Fab 2, which is a 6-inch wafer fab, to other 8-inch fabs instead, in order to resolve the issue of insufficient production capacity. At the same time, Navitas is also targeting SAIC (Xiamen Sanan) as a potential supplier of foundry services. With regards to other markets for GaN applications, Navitas will likely target the data center market first by releasing related products in 2022.

Proven power management IC supplier PI (Power Integrations) was the longtime undisputed leader in the GaN power devices market. For this year, PI has released the latest InnoSwitchTM4-CZ series of chips, based on its proprietary PowiGaNTM technology. Featured in products such as Anker’s 65W fast chargers, the InnoSwitch4-CZ chips have received universal acclaim from the fast charge market. In addition, PI’s recently released integrated AC-DC controller and USB PD controller ICs are expected to be major drivers of PI’s revenue growth this year. With an estimated 24% market share, PI will likely take the runner-up spot in the ranking of GaN power devices suppliers for 2021.

China-based Innoscience is expected to possess the third-highest market share in 2021 due to increased support from the Chinese government

It should be pointed out that the market share of China-based Innoscience is projected to rise to 20% this year, the third highest among GaN suppliers. Innoscience’s remarkable performance can primarily be attributed to the massive spike in its shipment of high-voltage and low-voltage GaN products. In particular, Innoscience’s GaN power ICs, used for fast chargers, are now entering the supply chains of tier-one notebook manufacturers for the first time ever. At the same time, while the company’s Suzhou-based 8-inch wafer fab has already kicked off mass production, Innoscience will gradually expand the competitive advantage derived from its IDM business model in the fast-evolving GaN industry. Not only is the company currently actively cultivating its presence in applications including Lidar, OBC (onboard charger) for EVs, and LED power supplies, but it will also look to increase its market share even further next year via its diverse product mix.

Incidentally, the Chinese government has been increasing its support of the domestic third-generation semiconductor industry, while the ongoing China-US trade war has also forced Huawei and other companies in the downstream supply chain to reassess potential supply chain risks. Taken together, these factors have now created the perfect opportunity for China’s third-generation semiconductor material and component suppliers in both qualification/validation and production of domestic substitutes, thereby further propelling the growth of the third-generation semiconductor industry in China. According to TrendForce’s investigations, China invested in about 25 projects aimed at expanding the domestic production capacity of third-generation semiconductors in 2020 (excluding GaN-based optoelectronics materials and devices). These projects totaled more than RMB¥70 billion, a 180% YoY increase.

In particular, commercial products manufactured using SiC substrates, which are the most crucial materials in the third-generation semiconductor industry chain, are primarily based on 4-inch wafers in China, but the country is currently migrating to 6-inch wafers. Although the technological gap between China and its global competitors is fast narrowing, China is still noticeably inferior in terms of monocrystalline quality, resulting in a relatively low self-sufficiency rate of high-performance SiC substrates. TrendForce’s data indicate that, as of 1H21, about seven production lines have been installed in China for GaN-on-Si wafers, while at least four production lines for GaN power devices are currently under construction, also in China. On the other hand, China possesses at least 14 production lines (including those allocated to pilot runs) for 6-inch SiC wafers.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com