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The application of silicon carbide (SiC) and gallium nitride (GaN) in the automotive industry seems to be “gradually gaining momentum.”
Among them, the trend of SiC power devices accelerating their integration into vehicles has become very clear. In recent years, more and more new energy vehicle models have adopted SiC technology. Recently, a series of new models equipped with SiC such as EXEED’s new pure electric SUV STERRA ES, the second-generation AION V Aion Tyrannosaurus Rex, HIMA’s first luxury flagship sedan Jiangan S9, the 2025 models of BYD Seal, ZEEKR 007, and the VOYAH Zhiyin SUV have been successively released, forming a notable trend of collaboration between SiC and new energy vehicles.
At the same time, exploration in the application of GaN in automotive scenarios is continuously making new progress. Focusing on car chargers and automotive LiDAR scenarios, manufacturers such as Infineon and EPC have launched relevant products, contributing to the rising popularity of GaN automotive-grade applications.
Leading Players Battle for Automotive Scenarios with SiC/GaN Power Devices
The industry currently sees significant potential for the application of SiC/GaN power devices in the new energy vehicle (NEV) field, which is why major players are actively deploying automotive SiC/GaN markets.
International semiconductor giants such as STMicroelectronics, Infineon, and onsemi have been deeply involved in the SiC power device field for many years, holding a first-mover advantage in technology and market, which helps them better expand their global business, including the Chinese market.
In recent years, with the explosive growth of the Chinese domestic NEV market, the demand for automotive SiC has surged. International giants have been increasing their investment in the Chinese market, and partnering with car manufacturers is one of the most convenient ways to seize market share. Since 2024, a series of new cooperations between international manufacturers and local carmakers have been reached around automotive SiC power devices and modules, including STMicroelectronics’ strategic cooperation with Great Wall Motors, Infineon’s agreement with Xiaomi, and onsemi’s long-term cooperation agreement with Li Auto.
To reduce supply chain costs, STMicroelectronics has partnered with local leading SiC player, San’an Optoelectronics, investing billions of dollars to build a SiC device joint venture factory in China. Localizing SiC device production in China not only helps lower supply costs but also aids in further expanding their SiC automotive business in China through capacity assurance.
Lowering costs and improving efficiency can help expand the market, while enhancing technical advantages can also attract customer attention, thereby facilitating cooperation. For example, in the first half of 2024, Infineon launched a new generation of SiC MOSFET trench gate technology, which improved the main performance indicators of the MOSFET by 20% under the premise of ensuring quality and reliability, thereby enhancing overall efficiency.
Currently, capacity building and technological upgrades are the focus of international giants, and major manufacturers are expected to continue making breakthroughs in these two areas in the future.
In the Chinese NEV market, international SiC power device giants are accelerating the introduction of related products, while local companies are also making efforts to get a share of the market.
During PCIM Asia 2024, TrendForce had exchanges with Infineon, onsemi, EPC, Semikron Danfoss, Soitec, and StarPower Semiconductor, understanding their deployment and progresses in SiC and GaN automotive markets.
Infineon
On the international front, Infineon is currently committed to comprehensively enhancing the competitiveness of its SiC power device products in terms of cost-performance ratio, reliability, and efficiency. Leveraging its profound accumulation in technology and market as an international IDM giant, Infineon can better respond to various market demands for power devices, including automotive applications.
At the PCIM Asia 2024 exhibition, in the electric mobility section, Infineon showcased its HybridPACK™ Drive G2 Fusion module and Chip Embedding power devices to the domestic market for the first time. The HybridPACK™ Drive G2 Fusion module integrates IGBT and SiC chips, significantly improving module efficiency while effectively reducing SiC module costs. The Chip Embedding technology can be directly integrated into the PCB board, achieving minimal stray inductance and high integration.
For automotive electronics control, Infineon demonstrated its electronic control system solution using the second-generation HybridPACK™ Drive SiC power module motor controller system. This system integrates AURIX™ TC4 series products, the second-generation 1200V SiC HybridPACK™ Drive modules, third-generation EiceDRIVER™ 1EDI30XX driver chips, and non-magnetic core current sensors.
For on-board charger (OBC)/DC-DC applications, Infineon showcased its complete top-cooling solution: a 7.2kW magnetic integrated Tiny Box top-cooling solution, achieving an effective combination of high power density electrical and high integration structural solutions.
onsemi
Sangjun Koo, an application engineer at onsemi, stated that onsemi has two main advantages in the SiC field: first, a fast response to market demand for SiC power devices, enabling rapid decision-making on product development; second, as the world’s second-largest SiC power device supplier, it has the capability for mass production, ensuring supply for customers. Based on these advantages, onsemi can better meet market demands, including automotive. Currently, onsemi is also actively exploring AI data center field, which is expected to develop in coordination with the automotive business.
To meet the charging needs under the 800V architecture, high-power OBCs are gradually entering the market. Achieving a peak system efficiency of 97% at 11kW and a power density of 2.2 kW/l. Additionally, this design can reduce the use of passive components, thereby reducing PCB area and contributing to automotive lightweighting.
To meet the high-power demands of main drive inverters, onsemi has launched the 1200V SiC half-bridge power module B2S, supporting up to 400kW of output power. This module uses transfer molding packaging, and the chip connections are implemented with silver sintering technology, achieving high reliability and low thermal resistance. The module has a stray inductance of approximately 4nH and integrates onsemi’s latest M3 silicon carbide technology, ensuring high performance.
EPC
Zhang Shengke, Vice President of Reliability at EPC, said that EPC’s low-voltage GaN devices can cover the demand for all 48V to 12V server power converters. They are also exploring humanoid robots and LiDAR scenarios. EPC’s LiDAR GaN devices are also suitable for automotive applications.
At PCIM Asia 2024, EPC showcased a humanoid robot sample. Some joint components in this robot are likely to adopt GaN. Additionally, EPC brought a driverless electric cart with a LiDAR component equipped with EPC’s GaN power devices.
Semikron Danfoss
According to Norbert Pluschke, Director of Solution and System Sales & Technical Director for Greater China at Semikron Danfoss, as one of the leading SiC module packaging manufacturers, Semikron Danfoss offers two packaging solutions specifically optimized for silicon carbide: The first is the full-bridge power module eMPack® platform, which features extremely low stray inductance (2.5nH), facilitating high switching speeds for SiC. The second is the DCM platform, a direct-cooled injection-molded half-bridge module developed for demanding automotive traction inverter applications, and this technology is also suitable for future GaN applications.
At the PCIM Asia 2024 exhibition, Semikron Danfoss showcased its solutions in the industrial energy and automotive sectors, including electric motor controller products for new energy vehicles from companies such as Citroën and EKPAC Power, utilizing eMPack® and DCM SiC modules.
Soitec
Gonzalo Picun, Business Development Manager at Soitec, stated that large-size silicon carbide (SiC) substrates, which can effectively improve the production efficiency of SiC power devices and reduce costs, are the key development trend of the current SiC industry. Meanwhile, many new material technologies have emerged, which can help improve material utilization efficiency. Additionally, Soitec also finds that various innovative SiC growth methods are developed, such as Physical Vapor Transport (PVT), Liquid Phase, and Chemical Vapor Deposition (CVD), which can help enhance the quality of SiC substrates. In this context, Soitec is actively developing high-quality material technologies, including large-size substrates.
Regarding capacity, Soitec’s new factory in Bernin, France, was completed in October 2023, with a total investment of 380 million euros (approximately 3 billion RMB) and covering an area of 2,500 square meters. Once fully operational in 2028, it can produce 500,000 wafers annually, with 80% being SmartSiC wafers. Technologically, Soitec possesses unique SmartCut™ technology, which can precisely cut SiC wafers, improving wafer yield and performance, and significantly increasing production output. Overall, Soitec has the strength to secure a significant place in the application of SiC in new energy vehicles (NEVs).
StarPower Semiconductor
StarPower Semiconductor has made swift progress in the automotive sector. According to Deputy General Manager Dr. Tang Yi, in 2022, StarPower Semiconductor became the first domestic company to mass-produce SiC modules for car manufacturers (used in the XPeng G9 model). In 2023, it began mass production and supply of its self-developed silicon carbide (SiC) chips. This year, StarPower Semiconductor’s self-built production line has also started supplying products, with applications covering main drive inverters, power supplies, and automotive air conditioning systems.
Domestic companies such as StarPower Semiconductor are continually advancing the adoption of SiC in automotive applications, competing with international giants.
While SiC power devices are rapidly integrating into automotive applications, GaN is also being actively promoted by major players. STMicroelectronics, Infineon, and onsemi are exploring both SiC and GaN automotive opportunities. STMicroelectronics’ SiC products have been or will be introduced into models from leading NEV manufacturers such as Li Auto and Great Wall Motors. Its PowerGaN series products are also suitable for electric vehicles and their charging facilities in higher power applications.
EPC has developed Time-of-Flight (ToF)/LiDAR reference designs based on GaN, utilizing GaN field-effect transistors (GaN FETs) to offer fast switching speeds, smaller footprints, high efficiency, and excellent reliability in LiDAR circuits. Currently, EPC’s eGaN FET has accumulated billions of hours of successful experience in automotive applications, including LiDAR and radar systems.
The application of GaN in the automotive field is still in its early stages, with mature applications in automotive LiDAR products, and it is gradually penetrating other automotive scenarios. By around 2025, GaN is expected to start small-scale penetration into low-power on-board chargers (OBCs) and DC-DC converters. Further into 2030, original equipment manufacturers (OEMs) might consider introducing GaN into main drive inverters.
Trends in Automotive Silicon Carbide/Gallium Nitride
Thanks to the collective efforts of Chinese domestic and international manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power devices, the global automotive industry, especially the new energy vehicle (NEV) sector, is undergoing revolutionary changes.
Currently, the NEV sector is transitioning from a 400V voltage system to an 800V voltage system. In the latest new-energy models released by major manufacturers, 800V high-voltage SiC platforms have almost become standard configuration. This transition mainly aims to enhance battery charging speed, reduce battery heating, improve motor efficiency, extend vehicle range, and lower manufacturing costs. In this process, SiC power devices play a crucial role.
In automotive applications, 1200V and even 1700V SiC power devices are becoming mainstream to better match the platform requirements of 800V or higher voltage levels.
This transition from 400V to 800V is also accelerating the popularization of NEVs. According to recent data from major NEV manufacturers, significant sales growth was achieved in August, and this growth trend is expected to continue, benefiting SiC power device manufacturers.
Additionally, with the advancement of the NEV industry, the demand for reducing energy loss and enhancing reliability is increasing, driving the need for more integrated SiC modules.
Summary
In recent years, advancements in synthesis technology and expanded production scale have driven the costs of SiC substrates and epitaxial layers downward, resulting in lower prices for related products such as devices and modules. This is favorable for further penetration into various application scenarios, especially the NEV field being massively adopted. Under the scale effect, price reduction further encourages automakers to promote SiC automotive adoption.
Simultaneously, the SiC industry is transitioning from 6-inch to 8-inch wafers. Although mainstream products are still 6 inches, the cost reduction and efficiency improvement of 8-inch wafers are significant, making it a focal point for manufacturers’ development. In the future, as 8-inch wafer capacity gradually increases, it is expected to further promote the widespread application of SiC in fields including NEVs and photovoltaic storage and charging.
Currently, SiC’s application in the NEV field is mostly concentrated in mid-to-high-end models. As costs and prices decrease, it is expected to gradually penetrate into low-to-mid-end NEV models, further enhancing its involvement in the NEV field.
Additionally, under the trend of industry integration, more and more SiC power device manufacturers are choosing to cooperate with NEV manufacturers to develop automotive SiC products. Guided by market and user needs, they are working from the front end of the industry chain to achieve customized technology and product development, shortening the process from R&D and verification to mass application, thereby achieving cost reduction and efficiency improvement while better seizing market opportunities.
Regarding GaN, in the NEV field, GaN devices currently mainly occupy applications below 400V. However, some manufacturers are promoting the high-voltage application development of GaN devices, including Bosch’s development of 1200V GaN technology for automotive use. In the future, GaN power devices will gradually expand from low-voltage automotive LiDAR applications to main drive inverters and other applications requiring higher voltage.
(Photo credit: TrendForce)
News
China’s penetration rate of new energy vehicles (NEVs) exceeded 40% for the first time in November this year, reaching 40.4% in domestic retail sales, a 4 percentage point increase from the same period last year. Optimistic growth is anticipated by 2024, with wholesale sales of new energy passenger vehicles expected to reach 11 million units.
The China Passenger Car Association (CPCA) released the latest data, forecasting that the total sales of passenger vehicles in China in November 2023 will reach 25.5 million units. With a huge increase of the 3.2 million units exported in 2017, the overall sales of passenger vehicles are set to significantly surpass the wholesale volume of 24.5 million units in 2017, reaching a historic high.
It is evident that NEVs in China are seen as a catalyst for the next wave of economic momentum. According to a report by the BJNews, Cui Dongshu, the Secretary General of CPCA, stated that the Chinese domestic retail penetration rate of new energy passenger vehicles in November was 40.4%, a 4 percentage point increase from the 36% penetration rate of the same period last year.
This marks China’s first-ever monthly penetration rate of new energy passenger vehicles exceeding 40%. As a key driver of growth in the Chinese passenger vehicle market, the retail sales of NEVs in November increased by nearly 40%, reaching 841,000 units with an 8.9% MoM growth.
In the first 11 months of this year, China’s cumulative retail sales of new energy passenger vehicles reached 6.809 million units, a YoY increase of 35.2%. CPCA believes that the growth outlook for the new energy passenger vehicle market in 2024 is relatively optimistic, with wholesale sales expected to reach 11 million units, a net increase of 2.3 million units, a 22% YoY increase, and a penetration rate of 40%.
Chinese brands in the NEV sector are gradually expanding their market influence through multifaceted development in technology and sales strategies. According to CPCA statistics, in November, 18 companies saw wholesale sales exceed 10,000 units, accounting for 88.9% of the total new energy passenger vehicle volume. BYD continued to lead the rankings with a monthly sales volume of about 301,400 units, followed closely by Tesla China with 82,400 units. The export of Chinese brand new energy passenger vehicles also showed significant growth, with A0-class electric vehicles accounting for nearly 60% and becoming the absolute mainstay of exports.
(Image: BYD)
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Insights
Honda, the Japanese automotive giant, is set to lay off around 900 employees from its Chinese joint venture, GAC Honda. This move comes as the company adjusts to the shifting market focus towards electric vehicles (EVs). Notably, this marks the first instance of job cuts in the 25-year collaboration between Honda and Guangzhou Automobile Group Co., Ltd. (GAC).
TrendForce’s Insights:
As per GAC Honda’s released data, the cumulative production and sales figures for the first ten months of 2023 witnessed a significant drop of 20.52% and 21.55%, totaling 520,500 and 499,400 vehicles, respectively. Apart from GAC Honda, both GAC Toyota and FAW Toyota have embarked on plans to scale back production or streamline personnel. Mitsubishi Motors announced officially to exit the Chinese market in October 2023, with GAC Aion taking over its factory.
Despite efforts by Japanese automakers to catch up EV revolution, the competition from independent brands remains formidable. GAC Honda and Dongfeng Honda introduced pure electric models like e:NP1 and e:NS1 in the Chinese market. GAC Toyota and FAW Toyota also entered the EV market with models like bZ3 and bZ4X.
However, facing intense competition from independent brands, joint ventures struggle to maintain market share. According to the China Passenger Car Association (CPCA) data, independent brands claimed 60% of the market share in October 2023, while joint venture brands dropped below 40%. This is a stark contrast to two years ago when independent brands held only 41.2% of the market.
Constrained by the cautious approach of Japanese automakers to vehicle electrification, joint ventures lack a robust lineup of pure electric models, relying mainly on hybrid models. Despite the hybrid technology’s strength in Japanese automakers, they are gradually losing ground to independent brands like Geely and BYD, resulting in a steady decline in joint venture brands’ market share.
The hybrid models and brand strength of Japanese automakers continue to command a presence in the market, due to current challenges such as EV high prices and range anxiety. However, in the mature Chinese market for pure electric vehicles, Japanese automakers must cede more control over the development of joint venture models to Chinese manufacturers. An example of successful collaboration is Dongfeng Nissan’s Venucia, which is based on Dongfeng Motor’s technology, blending Chinese manufacturers’ expertise with Japanese automakers’ brand strength.
Japanese joint venture brands face challenges, highlighting the necessity for innovative advancements in model technology amid the new energy vehicle era. Faced with the trend towards higher intelligence and electrification in new energy vehicles, Japanese automakers must recognize that their current priority is not to surpass Chinese manufacturers but to navigate the electrification wave successfully. Joint venture brands act as a crucial lifeline, and Japanese automakers can bridge the technological gap by leveraging joint venture platforms, utilizing resources from Chinese manufacturers, and fostering collaboration. The key lies in Japanese automakers transitioning from market development leaders to active learners.
News
Recent reports suggest that Li Auto, a Chinese new energy vehicle company, is currently building a team in Singapore dedicated to the R&D of SiC power chips. On LinkedIn, Li Auto has posted five recent job openings in Singapore, including roles like General Manager, SiC Power Module Failure Analysis/Physical Analysis Expert, SiC Power Module Design Expert, SiC Power Module Process Expert, and SiC Power Module Electrical Design Expert.
In terms of power devices, electric drive systems in current 400V models typically employ Si IGBT, while 800V models mostly utilize SiC MOSFETs. This choice enables higher power density, leading to smaller and lighter equipment.
SiC, known for enhancing the driving range of electric vehicles and improving charging efficiency, finds widespread application in components like main inverters, on-board chargers, and DC/DC converters.
Recognizing the potential, Li Auto is among the many new energy vehicle makers incorporating SiC into their products.
As of August last year, Li Auto had launched the construction of power semiconductor R&D and production base in the Suzhou High-tech Zone. The base aims to initiate sample production in the first half of 2023, officially beginning full-scale production in 2024, with an ultimate annual capacity of 2.4 million SiC power modules. This marks Li Auto’s strategic move into the independent industry landscape for the next generation of high-voltage electric drive technology.
To achieve higher efficiency on the high-voltage platform, Li Auto is opting for SiC power modules over traditional IGBT. At the 2023 Auto Shanghai in April, Li Auto unveiled an 800V fast charging solution featuring an 800V high-voltage electric drive system built on SiC technology, enabling a 10-minute charge for a range of 400 km.
Li Auto’s next-gen SiC power module, integrating multiple components into the motor controller design, compresses the controller’s volume to within 4L, boasting a high power density of up to 62 kW/L. This reduces the volume and weight of the electric drive system, further optimizing the vehicle’s spatial layout and energy consumption.
In addition to Li Auto, the all-new NIO ES6, also showcased at the 2023 Auto Shanghai, incorporates SiC power modules and is equipped with a the second generation high-efficiency e-drive platform.
Furthermore, Hongqi, FAW Group’s premium auto brand, latest electric E202 SUV debuted at the 2023 Auto Shanghai. Based on the FMEs architecture 800V SiC charging platform, it requires only 5 minutes of charging for a range of 300 km.
Notably, Huawei recently introduced the new DriveONE 800V high-voltage SiC motor platform, focusing on better performance for electric vehicles. With high-voltage SiC technology, this motor platform achieves a rotation speed of up to 22,000 rpm and a maximum efficiency of 98%. Huawei’s latest SiC motor release is anticipated to open a new page in the electric vehicle industry.
The integration of SiC power devices into electric vehicles represents a significant trend in the development of the new energy vehicle industry. Leading automakers are poised to invest more resources in the research and development of related products, ultimately attaining independent control over core technologies.
(Image: Li Auto)