In order to address the growing demand for high-performance memory solutions fueled by the expansion of the artificial intelligence (AI) market, Samsung Electronics has formed a new “HBM Development Team” within its Device Solutions (DS) Division to enhance its competitive edge in high-bandwidth memory (HBM), according to the latest report from Business Korea. The new team will concentrate on advancing the progress on HBM3, HBM3e, and the next-generation HBM4 technologies, the report noted.

This initiative comes shortly after the Korean memory giant changed its semiconductor business leader in May. Citing industry sources, the report stated that Samsung’s DS Division carried out an organizational restructuring centered on the establishment of the HBM Development Team.

Also, the move attracts attention as on July 4th, a report from Korea media outlet Newdaily indicated that Samsung has finally obtained approval from NVIDIA for qualification of its 5th generation HBM, HBM3e, though the company denied the market rumor afterwards.

Samsung has a long history of dedicating to HBM development. Since 2015, it has maintained an HBM development organization within its Memory Business Division. Earlier this year, the tech heavyweight also created a task force (TF) to boost its HBM competitiveness, and the new team will unify and enhance these ongoing efforts, the report noted.

According to the report, Samsung reached a significant milestone in February by developing the industry’s first HBM3e 12-layer stack, which offers the industry’s largest capacity of 36 gigabytes (GB). Samples of the HBM3e 8-layer and 12-layer stacks have already been sent to NVIDIA for quality testing.

Regarding the latest development, TrendForce reports that Samsung is still collaborating with NVIDIA and other major customers on the qualifications for both 8-hi and 12-hi HBM3e products. Samsung anticipates that its HBM3e qualification will be partially completed by the end of 3Q24.

According to TrendForce’s latest analysis on the HBM market, HBM production will be prioritized due to its profitability and increasing demand. However, limited yields of around 50–60% and a wafer area 60% larger than DRAM products mean a higher proportion of wafer input is required. Based on the TSV capacity of each company, HBM is expected to account for 35% of advanced process wafer input by the end of this year, with the remaining wafer capacity used for LPDDR5(X) and DDR5 products.

Read more

• [News] Samsung’s HBM3e Reportedly Passed NVIDIA’s Certification Though It Denies the Rumor
• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce

(Photo credit: Samsung)

According to a report from Reuters on July 4, consensus from 27 analysts compiled by LSEG SmartEstimate indicates that driven by the surge in demand for AI technology and the resulting rebound in memory prices, Samsung Electronics’ operating profit for Q2 2024 (ending June 30) is projected to skyrocket by 1,213% from KRW 670 billion in the same period last year to KRW 8.8 trillion (roughly USD 6.34 billion), marking the highest since Q3 2022.

Other memory giants are also optimistic about the operation afterwards. Take Micron as an example. Regarding the AI frenzy, Micron CEO Sanjay Mehrotra claimed that in the data center sector, rapidly growing AI demand enabled the company to grow its revenue by over 50% on a sequential basis.”

Mehrotra is also confident that Micron can deliver a substantial revenue record in fiscal 2025, with significantly improved profitability underpinned by our ongoing portfolio shift to higher-margin products.

On the other hand, SK Group also stated that by 2026, the group will invest KRW 80 trillion in AI and semiconductors, while continuing to streamline its businesses to increase profitability and return value to shareholders.

Read more

• [News] SK Hynix to Invest USD 75 Billion in AI Push, with 80% of It Flooding into HBM
• [News] Memory Giant Micron’s 3Q24 Earnings Report Released, Outlook Slightly Better Than Expected

(Photo credit: Samsung)

Google’s Tensor G4 could mark Samsung’s last mass-produced SoC, as earlier in May, Tensor G5 is reportedly adopting TSMC’s advanced 3nm process. Now here’s the latest development. According to a report by Wccftech, the chip, to be used in Google’s upcoming Pixel 10 lineup, has already reached tape-out, with mass production expected in 2025.

Google’s Tensor G5 would be its first fully self-designed smartphone SoC. Previous Tensor chips, somehow, were modifications from Samsung’s Exynos series, with Samsung being its foundry partner.

The report stated that Google’s decision to collaborate with TSMC is influenced by the Taiwanese semiconductor company’s established reliability in mass-producing wafers using its next-generation nodes.

Before Google, the foundry behemoth has already secured several major clients for its 3nm node. Both Qualcomm and Taiwanese smartphone fabless company MediaTek have reportedly adopted TSMC’s N3E node for their first 3nm chipsets. Apple’s upcoming A18 chips for iPhone 16 models, are said to be manufactured with TSMC’s N3E node as well, according to a report by Commercial Times.

On the other hand, regarding the progress of 3nm, Samsung is still struggling with the low yield rate for its latest Exynos 2500 processors. The company targets to increase the yield rate to over 60% before the product enters mass production, according to a previous report by Korean media outlet ZDNet Korea.

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• [News] Google Reportedly Shifts Orders from Samsung to TSMC for Its Upcoming Tensor G5 in the Pixel 10 Series

(Photo credit: Google)

In early June, NVIDIA CEO Jensen Huang revealed that Samsung’s High Bandwidth Memory (HBM) is still striving on the certification process, but is one step away from beginning supply. On July 4^th, a report from Korea media outlet Newdaily indicated that Samsung has finally obtained approval from the GPU giant for qualification of its 5th generation HBM, HBM3e. It is expected that Samsung will soon proceed with the subsequent procedures to officially start mass production for HBM supply, the report noted.

Citing sources from the semiconductor industry, the report stated that Samsung recently received the HBM3e quality test PRA (Product Readiness Approval) notification from NVIDIA. It is expected that negotiations for supply will commence afterward.

However, just one hour after the news reported that Samsung’s HBM3e passed NVIDIA’s tests, another media outlet, Hankyung, noted that Samsung has denied the rumor, clarifying it is “not true,” and that the company is consistently undergoing quality assessments.

TrendForce reports that Samsung is still collaborating with NVIDIA and other major customers on the qualifications for both 8-hi and 12-hi HBM3e products. The successful qualification mentioned in the article was only an internal achievement for Samsung. Samsung anticipates that its HBM3e qualification will be partially completed by the end of 3Q24.

Per a previous report from Reuters, Samsung has been attempting to pass NVIDIA’s tests for HBM3 and HBM3e since last year, while a test for Samsung’s 8-layer and 12-layer HBM3e chips was said to fail in April.

According to the latest report from Newdaily, Samsung’s breakthrough came about a month after the memory heavyweight sent executives in charge of HBM and memory development to the U.S. at NVIDIA’s request. Previously, it was reported that Samsung had failed to pass the quality test as scheduled due to issues such as overheating.

The report further stated that though from Samsung’s perspective, supplying HBM to NVIDIA was crucial, NVIDIA is also eager to receive more HBM, with the overwhelming demand for AI semiconductors and the impending mass production of its next-generation GPU Rubin, which significantly increases HBM usage.

According to the report, Samsung is expected to eliminate uncertainties in HBM and start full-scale mass production, giving a significant boost to its memory business. There are also suggestions that its HBM performance could see a quantum leap starting in the second half of the year.

On the other hand, Samsung’s major rival, SK hynix, is the primary supplier of NVIDIA’s HBM3 and HBM3e. According to an earlier TrendForce’s analysis, NVIDIA’s upcoming B100 or H200 models will incorporate advanced HBM3e, while the current HBM3 supply for NVIDIA’s H100 solution is primarily met by SK hynix.

According to a report from the Financial Times in May, SK hynix has successfully reduced the time needed for mass production of HBM3e chips by 50%, while close to achieving the target yield of 80%.

Read more

• [News] Jensen Huang Confirms NVIDIA Approaches Certification of Samsung’s HBM Chips
• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce

(Photo credit: Samsung)

According to a report from the Korean media outlet The Chosun Daily, Chinese company Huawei plans to collaborate with memory manufacturer Wuhan Xinxin Semiconductor Manufacturing Co. (XMC) to produce High Bandwidth Memory (HBM) semiconductors. Additionally, Jiangsu Changjiang Electronics Technology (JCET) and Tongfu Microelectronics, which are developing CoWoS advanced packaging technology, are also participating in the project.

CoWoS is a high-precision technology that integrates graphics processing units (GPUs) and HBM on a single substrate. This enhances computational performance, saves space, and reduces power consumption. Currently, the CoWoS technology developed by leading foundry TSMC is used in the production of AI chips for GPU giant NVIDIA.

In May 2023, according to another report from Reuters, China’s leading DRAM company CXMT (ChangXin Memory Technologies) collaborated with Tongfu Microelectronics to develop HBM chip samples. Additionally, tech media outlet The Information reported earlier that a series of Chinese companies, led by Huawei, plan to mass-produce HBM and increase China’s HBM output by 2026.

Furthermore, in March 2023, XMC announced the construction of an advanced HBM manufacturing plant, which is expected to produce 3,000 12-inch wafers per month.

The report further emphasizes that China is still in the early stages of HBM development. However, under the technological restrictions imposed by the United States in the semiconductor and artificial intelligence sectors, Huawei and a series of Chinese semiconductor companies’ move into HBM production has attracted close attention.

Currently, South Korean companies SK Hynix and Samsung Electronics control most of the global HBM market share, indicating that Huawei’s plan to develop HBM still has a long way to go.

Per TrendForce’s data, the three major HBM manufacturers held market shares are as follows: In 2023, SK Hynix and Samsung each held around 47.5%, while Micron’s share was roughly 5%. Still, forecasts indicate that SK Hynix’s market share in 2024 will increase to 52.5%, while Samsung’s will decrease to 42.4%.

Read more

• [News] Micron’s HBM Expansion at Full Throttle: Rumored to Expand in US, Malaysia Also an Option
• [News] XMC Initiates IPO Plan, Potentially Becoming China’s First HBM Foundry

(Photo credit: XMC)