Another breakthrough has emerged in flash memory layer technology! A recent report cited by tom’s Hardware has suggested that at the upcoming International Solid-State Circuits Conference (ISSCC) in February of this year, Samsung Electronics will unveil the next-generation V9 QLC NAND solution, pu...

Amid the AI trend, the significance of high-value-added DRAM represented by HBM continues to grow. HBM (High Bandwidth Memory) is a type of graphics DDR memory that boasts advantages such as high bandwidth, high capacity, low latency, and low power consumption compared to traditional DRAM chips. ...

Sam Altman, the CEO of OpenAI, the developer of the ChatGPT, is reportedly expected to visit Korea on January 26th. Altman may hold meetings with top executives from Samsung Electronics and SK Group to strengthen their collaboration on High-Bandwidth Memory (HBM). According to sources cited by Th...

Ennostar, a Taiwanese group focusing on the R&D and manufacturing of Micro LED, LED and compound semiconductor, has announced on January 19th a NTD 670 million (roughly USD 21.36 million) sale of the planned Micro LED production facility in Zhunan, Taiwan. Its subsidiary, EPISTAR, is anticip...

According to industry sources cited by South Korean media The Chosun Daily, Samsung has commenced the production of prototypes for its second-generation 3nm process and is testing the chip's performance and reliability. The goal is to achieve a yield rate of over 60% within the next six months. T...