Having experienced in worldwide lockdown caused by COVID-19 and rising geopolitical worries in recent years, governments of various countries hope to have wafer manufacturing plants in their own territories to reduce the possible impact of supply chain disconnection; however, building and operating a semiconductor wafer manufacturing factory is not an easy task. In addition to the extremely high cost, high labor demand, and environmental conditions are also a threshold. Therefore, TSMC, the leader in foundries, has naturally become the target of active invitations by governments to set up factories. In addition to Japan,  after evaluating customer needs, cost, and environmental resources (including water, electricity, land) and other conditions, TSMC doesn’t rule out the possibility of setting up factories in other countries if it is cost-effective.

Japan, once the world’s largest semiconductor cluster, still occupies a very important position in some semiconductor equipment, raw materials and packaging materials, and technologies. TSMC has previously announced the establishment of a 3DIC material R&D center in Japan, and this time it announced the establishment of a wafer manufacturing plant. In addition to deepening the streamlined process of customer products from manufacturing to packaging, it can also cooperate closely with upstream equipment vendors, chemical raw materials factories, such as TEL, SCREEN, SUMCO, Shinetsu, etc.

（Image credit: TSMC）

Demand for fast chargers used for various consumer electronics has been quickly rising. For instance, smartphone brands such as Xiaomi, OPPO, and Vivo led the industry by releasing fast chargers in 2018, subsequently gaining consumer acceptance via their fast chargers’ competitive advantages in cooling efficiency and compact physical dimensions. At the moment, notebook computer manufacturers are also expressing a willingness to adopt fast charging technology. Hence, the GaN power devices segment became the fastest-growing category in the third-generation semiconductor industry. TrendForce expects annual GaN power devices revenue for 2021 to reach US$83 million, an impressive 73% YoY increase.

Regarding the ranking of GaN power devices suppliers, Navitas is projected to obtain a 29% market share (measured by total shipment) and overtake Power Integration for the top position this year. Thanks to Navitas’ proprietary GaNFast power IC design and great relationships with its partners in the semiconductor supply chain, it has become the largest supplier of GaN power IC chips in the consumer electronics markets. The company is currently partnering with leading global smartphone and PC OEMs, including Dell, Lenovo, LG, Xiaomi, and OPPO. Given the rising demand for Navitas’ fast charge ICs from clients this year, the company is expected to transition its chip orders in 2H21 from TSMC’s Fab 2, which is a 6-inch wafer fab, to other 8-inch fabs instead, in order to resolve the issue of insufficient production capacity. At the same time, Navitas is also targeting SAIC (Xiamen Sanan) as a potential supplier of foundry services. With regards to other markets for GaN applications, Navitas will likely target the data center market first by releasing related products in 2022.

Proven power management IC supplier PI (Power Integrations) was the longtime undisputed leader in the GaN power devices market. For this year, PI has released the latest InnoSwitchTM4-CZ series of chips, based on its proprietary PowiGaNTM technology. Featured in products such as Anker’s 65W fast chargers, the InnoSwitch4-CZ chips have received universal acclaim from the fast charge market. In addition, PI’s recently released integrated AC-DC controller and USB PD controller ICs are expected to be major drivers of PI’s revenue growth this year. With an estimated 24% market share, PI will likely take the runner-up spot in the ranking of GaN power devices suppliers for 2021.

China-based Innoscience is expected to possess the third-highest market share in 2021 due to increased support from the Chinese government

It should be pointed out that the market share of China-based Innoscience is projected to rise to 20% this year, the third highest among GaN suppliers. Innoscience’s remarkable performance can primarily be attributed to the massive spike in its shipment of high-voltage and low-voltage GaN products. In particular, Innoscience’s GaN power ICs, used for fast chargers, are now entering the supply chains of tier-one notebook manufacturers for the first time ever. At the same time, while the company’s Suzhou-based 8-inch wafer fab has already kicked off mass production, Innoscience will gradually expand the competitive advantage derived from its IDM business model in the fast-evolving GaN industry. Not only is the company currently actively cultivating its presence in applications including Lidar, OBC (onboard charger) for EVs, and LED power supplies, but it will also look to increase its market share even further next year via its diverse product mix.

Incidentally, the Chinese government has been increasing its support of the domestic third-generation semiconductor industry, while the ongoing China-US trade war has also forced Huawei and other companies in the downstream supply chain to reassess potential supply chain risks. Taken together, these factors have now created the perfect opportunity for China’s third-generation semiconductor material and component suppliers in both qualification/validation and production of domestic substitutes, thereby further propelling the growth of the third-generation semiconductor industry in China. According to TrendForce’s investigations, China invested in about 25 projects aimed at expanding the domestic production capacity of third-generation semiconductors in 2020 (excluding GaN-based optoelectronics materials and devices). These projects totaled more than RMB¥70 billion, a 180% YoY increase.

In particular, commercial products manufactured using SiC substrates, which are the most crucial materials in the third-generation semiconductor industry chain, are primarily based on 4-inch wafers in China, but the country is currently migrating to 6-inch wafers. Although the technological gap between China and its global competitors is fast narrowing, China is still noticeably inferior in terms of monocrystalline quality, resulting in a relatively low self-sufficiency rate of high-performance SiC substrates. TrendForce’s data indicate that, as of 1H21, about seven production lines have been installed in China for GaN-on-Si wafers, while at least four production lines for GaN power devices are currently under construction, also in China. On the other hand, China possesses at least 14 production lines (including those allocated to pilot runs) for 6-inch SiC wafers.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com

This year sees the continuation of the persistent chip shortage, which entails a shortage of production capacity for not only 12-inch wafers fabricated with mature process technologies but also 8-inch wafers in particular. The shortage of 8-inch wafer production capacity initially began gestating in 2H19, owing to emerging demand from structural changes in the semiconductor industry, with 5G smartphones and PMICs used in new energy vehicles as two examples of such demand. At the same time, the consumption of semiconductor production capacity has also increased multiplicatively in recent years as a result of the aforementioned structural changes. TrendForce expects demand for semiconductor capacity from emerging applications to continue rising in the coming years.

In response to this emerging demand, foundries such as TSMC, UMC, and SMIC are currently expanding their investment in mature process technologies. TrendForce expects the industry’s total 8-inch wafer capacity to grow at a 3-5% CAGR from 2019 to 2023, while 12-inch wafer capacity is expected to grow at an 11-13% CAGR across the same period. It should be pointed out that production capacities allocated to the 0.18-0.11µm process nodes（for 8-inch wafer fabrication） and 55nm-12nm nodes（for 12-inch wafer fabrication）represent the most severe shortage among all process nodes. Hence, certain foundries are expected to gradually install additional production capacities for mature process technologies in 2H22-1H23. These installations will likely help address the ongoing chip shortage.

In addition, several foundries are focusing on expanding their 28nm manufacturing capacity, primarily because transistor architecture below the 20nm node requires a transition to FinFET architecture, which is relatively costly. The 28nm node represents the sweet spot in terms of cost/benefit and is widely used for manufacturing such mainstream products as notebook Wi-Fi chips, smartphone OLED driver ICs, automotive MCUs, and image signal processors. Furthermore, chips used for IoT applications, including smart home appliances and set-top boxes, as well as other products currently manufactured at the 40nm node will likely be migrated to 28nm manufacturing, meaning the demand for 28nm capacity will continue to grow going forward.

（Image credit: Pixabay）

As seen from the market, components of power semiconductors are mostly used in industrial fields, including motor control, rail transit, wireless power supply, energy control, and smart grid, which occupy more than 30% in the long run that is expected to arrive at 35% in 2021, followed by automotive applications at 29% that will gradually expand the automotive and high voltage MOSFET markets alongside the development of NEVs and EVs. In addition, consumer electronics also account for 18% of the elevated demand for notebooks, smartphones, wearable, and quick chargers. Communication and computing each take up 10% and 7%.

Demand for Consumer Electronics Applications: Quick Charging

The faster transmission of 5G smartphones compared to that of 4G requires additional radio frequency components, thus an increase in power consumption and the speed of battery drainage becomes inevitable. Brands have been releasing USB-PD quick charging products that are currently most adopted with Type-C under the rising requirements of consumers in charging efficiency, and a support of transmission voltage from higher specifications will require an integration with synchronous rectification MOSFET that is essential in adjusting optimization, as well as an increase in the quantity of MOSFET. In terms of materials, small chargers of high power density are steadily becoming market mainstream amidst the development and popularization of GaN technology, as well as the ever-changing market of USB Type-C PD chargers, and GaN that has a low calorific value and small dimension has become the optimal material for MOSFET pertaining to quick charging.

Demand for Communication Applications: 5G Base Station

5G base stations, adopted with the Massive MIMO technology, and require multi-channel architectures such as 32 channels (32T32R) and 64 channels (64T64R), are the core equipment of 5G network, and an increase in channel density will also lead to an increment in power consumption and cost for 5G base stations at the same time. 5G base stations consume double the power than 4G, while the demand for lowering power consumption has risen the demand for low depletion and high thermostability. In addition, the establishment of 5G network has elevated the scale of data centers and cloud services, while the installation of servers has also stimulated the demand for power management modules such as AC/DC converters and DC/DC converters. Hence, communication MOSFET is now one of the major demands.

Demand for Automotive Applications: NEV

The transition of the existing automotive industry that marches from traditional fossil fuel vehicles to NEVs requires extra power semiconductor components such as MOSFET to operate synergistically. For traditional fossil fuel vehicles, various power supply components are powered by the battery, which usually comes in either 24V or 12V. The voltage for the power battery of NEVs is usually 336V or 384V and can go up to 580-600V for large electric passenger cars, which is why power semiconductor components are necessary between high and low voltage systems of NEVs to implement voltage adjustments and achieve flowing of current between two systems that allow each electronic component to function.

The electronic components that complement the battery system of a NEV operate at different voltage levels, so voltage conversion is required as electric power moves through different components. As a MOSFET continuously switches, it gradually raises or lowers the voltage. Hence, the important considerations in MOSFET designs include current strength and withstand voltage. Additionally, different applications have their own design needs with respect to switching frequency, switching noise, oscillation damping, and DPM.

As the number of electronic components in a car increases, the number of automotive applications grows for power semiconductor components such as MOSFETs. Originally, a car with a traditional ICE has at least 90 MOSFET chips. As for NEVs, the number of MOSFET chips per vehicle is usually around 200 but can reach up to around 400 for high-end models. With more functions and features being added into a NEV, the chip number is expected to rise further in the future.

Demand for Industrial Applications: Automation and Charging Piles for NEVs

The industrial segment of the market for power semiconductor components has the widest range of applications. Most kinds of industrial equipment contain MOSFETs. At the same time, many manufacturing and processing sectors are adopting automation technologies in order to shorten process cycle time, reduce production costs, and minimize equipment idling. Besides the ongoing trend toward Industry 4.0, the shock of the COVID-19 pandemic has accelerated the progress in industrial automation during recent years because manufacturers have been compelled to find ways to keep their production lines running with limited manpower.

Compared with traditional Si-based MOSFETs and IGBTs, SiC-based MOSFETs have significant advantages in the industrial segment of the power semiconductor market because they are able to withstand higher voltages, perform faster switching, and offer lower on-resistance. Furthermore, the adoption of SiC can contribute to a reduction in power consumption and a more compact system. Hence, SiC-based solutions have become the focus of product development for power component suppliers.

Regarding charging piles for NEVs, these are considered industrial equipment and therefore have to conform to the certifications of the major industry bodies. Playing a key role in the proliferation of NEVs, charging piles are being developed to provide a shorter charging period as well as higher-power charging in different scenarios. In this application field, power semiconductor components are essential to electric power conversion. Electromechanical devices including AC/DC converter and DC/DC converter are the key parts of a charging pile because they perform voltage and frequency conversions. Due to the demand for an ever shorter charging period, power components have to achieve a higher standard in terms of withstand voltage. Hence, SiC-based MOSFETs are trickling into the charging pile market as component suppliers develop solutions that minimize both thermal resistance and switching loss that occurs during high-frequency switching.

（Image credit: Unsplash）

Despite the intensifying COVID-19 pandemic that swept Taiwan in 2Q21, the domestic OSAT (outsourced semiconductor assembly and test) industry remained largely intact, according to TrendForce’s latest investigations. Global sales of large-sized TVs were brisk thanks to major sporting events such as the Tokyo Olympics and UEFA Euro 2020. Likewise, the proliferation of WFH and distance learning applications propelled the demand for IT products, while the automotive semiconductor and data center markets also showed upward trajectories. Taking into account the above factors, OSAT companies raised their quotes in response, resulting in a 26.4% YoY increase in the top 10 OSAT companies’ revenue to US$7.88 billion for 2Q21.

TrendForce indicates that, in light of the ongoing global chip shortage and the growing production capacities of foundries/IDMs in the upstream semiconductor supply chain, OSAT companies gradually increased their CAPEX and expanded their fabs and equipment in order to meet the persistently growing client demand. However, the OSAT industry still faces an uncertain future in 2H21 due to the Delta variant’s global surge and the health crisis taking place in Southeast Asia, home to a significant number of OSAT facilities.

Regarding the performances of individual OSAT companies in 2Q21, market leader ASE and Amkor each recorded revenues of US$1.86 billion and US$1.41 billion, which represented YoY growths of 35.1% and 19.9%, respectively, for the quarter. Both companies benefitted from strong demand for 5G smartphones, notebook computers, automotive chips, and networking chips. In particular, ASE allocated some of its capacities to KYEC (which suffered a drop in its IC testing capacity due to the pandemic) and therefore experienced a surge in its revenue. Also posting a revenue growth in 2Q21 was Amkor, which took second place on the top 10 list owing to the high demand for automotive chips, HPC chips, and 5G handsets released by Apple and other smartphone brands.

SPIL’s revenue for 2Q21 reached US$931 million, a modest 2.3% YoY increase. The company’s relatively muted growth can be attributed to the fact that smartphone IC packaging demand from Huawei, one of SPIL’s major clients, had plunged, while other smartphone brands did not place orders sufficient for making up for this plunge. As previously mentioned, some of KYEC’s testing capacities were adversely affected by the COVID-19 pandemic, resulting in a 6.8% YoY increase in KYEC’s revenue to a mere US$274 million for 2Q21. PTI gradually recovered from difficulties resulting from the closure of its Japanese and Singaporean subsidiaries. For 2Q21, PTI’s revenue reached US$742 million, a 14.3% YoY increase.

Regarding Chinese OSAT companies, JCET and Hua Tian both expanded their capacities in order to meet the massive demand from the domestic 5G telecom, base station, consumer electronics, and automotive markets. While JCET and Hua Tian continue to operate in accordance with China’s goal of achieving domestic semiconductor substitutes, the two companies’ revenues for 2Q21 reached US$1.1 billion and US$467 million, which represented YoY growths of 25% and 64.7%, respectively. It should be pointed out that TFME also benefitted from the aforementioned market demand. TFME’s revenue reached US$591 million, a 68.3% YoY increase, which was the highest increase among the top 10 OSAT companies in 2Q21. TFME’s impressive growth took place primarily because the company is the main OSAT provider for AMD. As AMD captured some of Intel’s market share, both AMD and, by extension, TFME, experienced a resultant revenue growth.

Finally, ChipMOS and Chipbond, which specialize in panel driver IC packaging and testing, benefitted from major sporting events such as the Tokyo Olympics and UEFA Euro 2020. Given the skyrocketing demand for display panels, IC testing demand for driver ICs, including TDDI and DDI, also underwent a corresponding rise. Notably, due to a shortage of packaging materials, ChipMOS raised the price of its packaging services for memory products and subsequently registered a spike in both revenue and gross profits. While both companies’ revenues reached US$251 million, ChipMOS and Chipbond each registered revenue growths of 38.4% YoY and 49.6% YoY, respectively.

For more information on reports and market data from TrendForce’s Department of Semiconductor Research, please click here, or email Ms. Latte Chung from the Sales Department at lattechung@trendforce.com