As two representative materials of wide-bandgap semiconductors, gallium nitride (GaN) currently thrives in the fast charging sector of consumer electronics, while silicon carbide (SiC) is gradually gaining ground in the application scenarios of new energy vehicles. Simultaneously, both are expanding into broader application boundaries. The strong emergence of AI has created new incremental markets for silicon carbide and gallium nitride.

Against this backdrop, innovative products such as Infineon’s CoolSiC™ MOSFET 400V series and Navitas’ new 4.5kW server power supply solutions have recently been launched, driving the increasing popularity of silicon carbide/gallium nitride in AI server power supplies (PSU).

Silicon Carbide/Gallium Nitride: The Breakthrough for PSU Upgrades

In recent years, the hot application of generative AI and the explosive growth of AI chip computing power have led to a surge in global data center electricity consumption. To address the high energy consumption crisis brought about by AI, upgrading data center PSUs has become a critical breakthrough.

Currently, PSUs for global AI and hyperscale computing data centers come in three form factors: CRPS185, CRPS265, and OCP of the Open Compute Project. The heights and widths of these power supplies are the same, differing only in length. Each CRPS185 power supply has fixed dimensions of 185mm x 73.5mm x 40mm. Thus, given that the physical size cannot change, increasing power demands from AI servers necessitate improvements in power density.

Power density enhancements can be achieved by increasing switching frequency. Since silicon-based products have reached their physical performance limits, the high switching frequency characteristics of GaN devices make them more suitable for high-density CRPS applications. In contrast, SiC devices, compared to silicon-based products, can operate at higher temperatures and voltages, achieving more efficient power conversion and reducing energy loss.

In practical applications, Navitas has significantly improved power density and efficiency through a reference design for CRPS server power supplies that combines SiC power devices and GaN power chips. In July this year, Navitas released an innovative CRPS185 4.5kW AI data center server power supply solution based on its GaNSafe™ high-power GaN power chips and the third-generation fast SiC power devices from GeneSiC™, reportedly achieving a leading power density of 137W/in³ and efficiency of over 97% in the AI data center PSU industry.

The Battle for AI Server Power Supplies Among Leading Silicon Carbide/Gallium Nitride Power Device Manufacturers

A competition in AI server power supplies among SiC/GaN power device manufacturers is already underway. Apart from Navitas, players such as Infineon, ON Semiconductor, EPC, Texas Instruments, GaNext, Corenergy, and Danxitech have entered the fray.

Infineon

In June of this year, Infineon launched a new CoolSiC™ MOSFET 400V series specially developed for AC/DC stages of AI servers. This new series has lower conduction and switching losses compared to existing 650V SiC and Si MOSFETs, increasing the power density of AI server power supplies to over 100W/in³ and achieving an efficiency of 99.5%, which is 0.3 percentage points higher than solutions using 650V SiC MOSFETs.

For the 54V output platform of AI servers, Infineon has developed a 3.3kW PSU dedicated demo board, utilizing Infineon’s CoolGaN™, CoolSiC™, and CoolMOS™ designs to achieve a benchmark overall efficiency of 97.5% and a power density of 96W/in³, meeting the high-power demands of data center PSUs.

At the PCIM Asia 2024 exhibition, an Infineon spokesperson emphasized that reducing data center energy consumption is a pressing need for AI industry development and a primary focus for Infineon. Infineon’s new generation of SiC MOSFET trench gate technology features lower on-resistance, higher switching efficiency, and better reliability, offering significant performance improvements to meet the needs of AI server power supplies.

ON Semiconductor

In response to the “three highs” challenge of PSU output power, conversion efficiency, and power density, ON Semiconductor has launched the latest generation of T10 PowerTrench® series and EliteSiC 650V MOSFET combination, providing a comprehensive solution for data center applications. This solution offers higher efficiency and better thermal performance in a smaller package size.

Among these products, the EliteSiC 650V SiC M3S MOSFET is designed to address data center efficiency challenges, meeting the Open Rack V3 (ORV3) PSU’s peak efficiency requirement of up to 97.5%. The T10 PowerTrench® series enhances thermal performance through optimized packaging technology, addressing the need for high power conversion efficiency and miniaturization in data centers.

EPC

At the PCIM exhibition, EPC showcased samples of humanoid robots using GaN and an autonomous mini-vehicle incorporating EPC’s GaN power devices in its onboard LiDAR components.

In addition to scenarios like humanoid robots and LiDAR, AI data center PSUs are also a key focus area for EPC. In communications with TrendForce Compound Semiconductor, Zhang Shengke, Vice President of EPC’s Reliability Division, stated that EPC’s low-voltage GaN devices can meet all 48V-to-12V server power converter component needs.

TI

As early as 2021, TI had reached a collaboration with server power supply provider Delta to develop efficient, high-power enterprise PSUs for data centers based on TI’s GaN technology and C2000™ MCU real-time control solutions.

TI has invested ten years into GaN technology and C2000™ MCU real-time control solutions. Through collaboration with Delta, TI can utilize innovative semiconductor manufacturing processes to produce silicon-based GaN and integrated circuits, helping companies like Delta create differentiated applications and power data centers worldwide more efficiently.

To lead the industry’s development, both Navitas and Infineon announced their AI data center power supply technology roadmaps, demonstrating their commitment to continuously strengthen their presence in this field.

To meet the exponential power demand increase of AI data centers, Navitas is continuously developing new server power supply platforms, aiming to rapidly elevate power levels from 3kW to 10kW, with a launch expected in Q4 2024.

In addition to its existing 3kW and 3.3kW PSUs, Infineon will soon launch new 8kW and 12kW PSUs to further enhance AI data center efficiency. With the 12kW reference board, Infineon is poised to release the world’s first AI data center PSU to achieve this performance level.

On the domestic front, GaNext has partnered with prestigious universities to jointly develop and mass-produce the industry’s first 3.5kW CRPS fanless server power supply, achieving a high efficiency of 97.6% through two-phase interleaved totem-pole PFC and LLC, with a power density reaching 73.6W/Inch³. Several relevant products from Nengsi Technology have been sampled by leading domestic enterprises and have successfully completed the related reliability tests. Danxitech’s related products have been sampled to leading domestic companies and have completed reliability tests. Corenergy ‘s 1200V GaN products have been sampled by a known server power supplier and are undergoing reliability evaluation. Various major manufacturers are jointly advancing the industrialization of GaN in AI data center PSU applications.

Summing up, power density and efficiency in AI server power supplies continue to improve, focusing on two primary performance indicators for SiC/GaN power device manufacturers. This trend is likely to spur the production of various high-performance products, attracting more SiC/GaN players to enter the market.

Conclusion

The data center power supply sector has become a key focus of leading silicon carbide/gallium nitride manufacturers in recent years. Some manufacturers’ SiC/GaN products have already made progress in the data center power supply market, with the strong rise of AI further driving the development of this market.

As AI technologies evolve and computational power demand continues to grow, the energy efficiency and power density requirements of data centers will become increasingly stringent, imposing higher performance demands on SiC/GaN power device products from various manufacturers.

The continuous development of the SiC and GaN industry, coupled with the thriving AI ecosystem, will result in more intersections between SiC, GaN, and AI. The competition for AI server power supplies among major manufacturers will become increasingly intense.

Industry reports indicate that since the beginning of this year, the price of mainstream 6-inch SiC substrates has been consistently declining, with a drop of nearly 30%.

As of mid-2024, industry insiders in China reveal that the price of 6-inch SiC substrates has fallen below USD 500, approaching the production cost of Chinese manufacturers. By the fourth quarter of this year, prices have further dropped to USD 450 or even USD 400, creating financial pressure for most manufacturers.

There are currently three main concerns regarding the changes in silicon carbide prices within the industry:

1. In 2024, the global production capacity for SiC crystal growth and substrate materials will see a significant increase. Some industry insiders are concerned that this may lead to a short-term oversupply in the market.

2. The growth of electric vehicles (EVs), the largest target application for SiC materials, has shown signs of slowing down over the past two years, raising doubts about the long-term sustainability of the EV market and whether there are new growth drivers to support continued breakthroughs in third-generation semiconductors.

3. The price war that has erupted in the silicon carbide (SiC) market since the beginning of this year has impacted SiC pricing, making corporate transition and growth key considerations for the present.

This article will explore the concerns mentioned above by examining perspectives from various industry stakeholders and provide insights to address these issues.

SiC Industry Faces New Wave of Mergers

Regarding production capacity, incomplete statistics from DRAMeXchange show that in 2024, a total of 14 new 8-inch silicon carbide plants will be constructed globally (12 under construction, 2 about to start). In the short term, only Wolfspeed’s Mohawk Valley plant will be able to provide 8-inch SiC wafers, with other manufacturers expected to gradually supply 8-inch SiC wafers starting next year.

In China, over 50 SiC-related expansion projects were initiated in 2023, with a total investment exceeding 90 billion RMB. In 2024, more than 100 companies in China are expected to enter the SiC sector, and over 50 SiC projects are making significant progress.

Regarding the sustainability of capacity expansion, some industry insiders have expressed concerns. While investments in the silicon carbide industry are enormous and some suppliers are actively expanding, the key question is whether they can continue to operate under lower pricing conditions, as oversupply remains uncertain.

In this environment, the SiC substrate industry is expected to undergo a wave of mergers and acquisitions, further reshaping the SiC industry’s landscape.

AI Data Centers: A New Growth Driver for Third-Gen Semiconductors

Although the electric vehicle market appears to have weakened recently, many major SiC manufacturers and automakers have indicated that SiC-powered electric vehicle models continue to grow, and 8-inch silicon carbide may present new opportunities. As of now, 800V models account for about 8.7% of China’s new energy passenger car market, with 800V silicon carbide penetration rates increasing to 72%.

In discussions about new growth drivers for third-generation semiconductors, the global wave of artificial intelligence (AI) and the growing demand for computing power in data centers are seen as key factors in unlocking the potential of third-generation semiconductors.

Price Wars Signal Turning Point for SiC Commercial Applications

Regarding price competition, some industry insiders suggest that while price wars may pressure profit margins for some manufacturers, in the long term, this could drive the entire industry towards more efficient and cost-effective solutions. This would also help SiC technology penetrate further into electric vehicles, photovoltaics, and industrial sectors.

In China’s market, the rapid decline in prices is directly related to an increasing number of local manufacturers gaining electric vehicle certification and expanding their production capabilities. Industry experts predict that as 8-inch SiC production capacity gradually ramps up, the cost of individual SiC devices or unit current density will further decrease, potentially marking a turning point for large-scale commercial applications of SiC.

(Photo Credit: Wolfspeed)

According to a report from Commercial Times, the increase in production capacity has resulted in an oversupply of 6-inch SiC substrates, leading to a decline in prices.

The report indicated that by mid-2024, each piece was priced at less than USD 500 (approximately the manufacturing cost in China). By the fourth quarter, prices have fallen to as low as USD 400, or even lower.

According to the report, industry insiders indicate that the price collapse has forced most businesses to sell at a loss. However, despite the low prices, buyers remain hesitant to make purchases, as they anticipate that prices will continue to decline.

As for 8-inch SiC substrates, the report noted that though mass production has not yet been achieved, prices have rapidly declined in 2024, particularly in China.

According to the report, there is currently no standard price for 8-inch SiC substrates, as they remain in the trial production stage with very limited supply. However, prices have begun to decline.

At the end of 2023, the average quotation of 8-inch SiC substrates in China was approximately USD 3,000 to USD 4,000 per piece. By the second quarter of 2024, the price had dropped to just USD 2,000, representing a downward revision of around 50% within just six months.

The report indicated that currently the market quotation for 8-inch SiC substrates has plummeted to around USD 1,500. The decline in the first three quarters of 2024 has exceeded 60%, and it is estimated that by the first quarter of 2025, the price will drop to just USD 1,000.

Regarding the progress of mass production for 8-inch SiC, Wolfspeed remains dominant, currently operating at a capacity utilization rate of 25%. The report noted that Wolfspeed’s stock price has declined by more than 60% since the beginning of the year, primarily due to disappointing financial results linked to a slowdown in demand for electric vehicles.

According to its press release, Wolfspeed is set to receive USD 750 million from the U.S. Department of Commerce’s CHIPS and Science Act funding. Additionally, the company has secured another USD 750 million in financing from Apollo Global Management, The Baupost Group, Fidelity Management & Research Company, and the Capital Group.

The report noted that SiC pricing is currently chaotic. While the decline in upstream materials should benefit downstream applications, buyers expect prices to continue falling, which makes them hesitant to make purchases. This, in turn, contributes to an even more rapid decline in prices.

According to the report, the SiC market continues to rely on major IDM factories. The decline in raw material prices and component costs is expected to benefit terminal applications, which will not be limited to electric vehicles or solar modules.

Read more

• [News] SiC and GaN Go Full Steam Ahead in Automotive Industry
• [News] A Price War in SiC Wafer Sector seems to Start

(Photo credit: Wolfspeed)

The application of silicon carbide (SiC) and gallium nitride (GaN) in the automotive industry seems to be “gradually gaining momentum.”

Among them, the trend of SiC power devices accelerating their integration into vehicles has become very clear. In recent years, more and more new energy vehicle models have adopted SiC technology. Recently, a series of new models equipped with SiC such as EXEED’s new pure electric SUV STERRA ES, the second-generation AION V Aion Tyrannosaurus Rex, HIMA’s first luxury flagship sedan Jiangan S9, the 2025 models of BYD Seal, ZEEKR 007, and the VOYAH Zhiyin SUV have been successively released, forming a notable trend of collaboration between SiC and new energy vehicles.

At the same time, exploration in the application of GaN in automotive scenarios is continuously making new progress. Focusing on car chargers and automotive LiDAR scenarios, manufacturers such as Infineon and EPC have launched relevant products, contributing to the rising popularity of GaN automotive-grade applications.

Leading Players Battle for Automotive Scenarios with SiC/GaN Power Devices

The industry currently sees significant potential for the application of SiC/GaN power devices in the new energy vehicle (NEV) field, which is why major players are actively deploying automotive SiC/GaN markets.

International semiconductor giants such as STMicroelectronics, Infineon, and onsemi have been deeply involved in the SiC power device field for many years, holding a first-mover advantage in technology and market, which helps them better expand their global business, including the Chinese market.

In recent years, with the explosive growth of the Chinese domestic NEV market, the demand for automotive SiC has surged. International giants have been increasing their investment in the Chinese market, and partnering with car manufacturers is one of the most convenient ways to seize market share. Since 2024, a series of new cooperations between international manufacturers and local carmakers have been reached around automotive SiC power devices and modules, including STMicroelectronics’ strategic cooperation with Great Wall Motors, Infineon’s agreement with Xiaomi, and onsemi’s long-term cooperation agreement with Li Auto.

To reduce supply chain costs, STMicroelectronics has partnered with local leading SiC player, San’an Optoelectronics, investing billions of dollars to build a SiC device joint venture factory in China. Localizing SiC device production in China not only helps lower supply costs but also aids in further expanding their SiC automotive business in China through capacity assurance.

Lowering costs and improving efficiency can help expand the market, while enhancing technical advantages can also attract customer attention, thereby facilitating cooperation. For example, in the first half of 2024, Infineon launched a new generation of SiC MOSFET trench gate technology, which improved the main performance indicators of the MOSFET by 20% under the premise of ensuring quality and reliability, thereby enhancing overall efficiency.

Currently, capacity building and technological upgrades are the focus of international giants, and major manufacturers are expected to continue making breakthroughs in these two areas in the future.

In the Chinese NEV market, international SiC power device giants are accelerating the introduction of related products, while local companies are also making efforts to get a share of the market.

During PCIM Asia 2024, TrendForce had exchanges with Infineon, onsemi, EPC, Semikron Danfoss, Soitec, and StarPower Semiconductor, understanding their deployment and progresses in SiC and GaN automotive markets.

Infineon

On the international front, Infineon is currently committed to comprehensively enhancing the competitiveness of its SiC power device products in terms of cost-performance ratio, reliability, and efficiency. Leveraging its profound accumulation in technology and market as an international IDM giant, Infineon can better respond to various market demands for power devices, including automotive applications.

At the PCIM Asia 2024 exhibition, in the electric mobility section, Infineon showcased its HybridPACK™ Drive G2 Fusion module and Chip Embedding power devices to the domestic market for the first time. The HybridPACK™ Drive G2 Fusion module integrates IGBT and SiC chips, significantly improving module efficiency while effectively reducing SiC module costs. The Chip Embedding technology can be directly integrated into the PCB board, achieving minimal stray inductance and high integration.

For automotive electronics control, Infineon demonstrated its electronic control system solution using the second-generation HybridPACK™ Drive SiC power module motor controller system. This system integrates AURIX™ TC4 series products, the second-generation 1200V SiC HybridPACK™ Drive modules, third-generation EiceDRIVER™ 1EDI30XX driver chips, and non-magnetic core current sensors.

For on-board charger (OBC)/DC-DC applications, Infineon showcased its complete top-cooling solution: a 7.2kW magnetic integrated Tiny Box top-cooling solution, achieving an effective combination of high power density electrical and high integration structural solutions.

onsemi

Sangjun Koo, an application engineer at onsemi, stated that onsemi has two main advantages in the SiC field: first, a fast response to market demand for SiC power devices, enabling rapid decision-making on product development; second, as the world’s second-largest SiC power device supplier, it has the capability for mass production, ensuring supply for customers. Based on these advantages, onsemi can better meet market demands, including automotive. Currently, onsemi is also actively exploring AI data center field, which is expected to develop in coordination with the automotive business.

To meet the charging needs under the 800V architecture, high-power OBCs are gradually entering the market. Achieving a peak system efficiency of 97% at 11kW and a power density of 2.2 kW/l. Additionally, this design can reduce the use of passive components, thereby reducing PCB area and contributing to automotive lightweighting.

To meet the high-power demands of main drive inverters, onsemi has launched the 1200V SiC half-bridge power module B2S, supporting up to 400kW of output power. This module uses transfer molding packaging, and the chip connections are implemented with silver sintering technology, achieving high reliability and low thermal resistance. The module has a stray inductance of approximately 4nH and integrates onsemi’s latest M3 silicon carbide technology, ensuring high performance.

EPC

Zhang Shengke, Vice President of Reliability at EPC, said that EPC’s low-voltage GaN devices can cover the demand for all 48V to 12V server power converters. They are also exploring humanoid robots and LiDAR scenarios. EPC’s LiDAR GaN devices are also suitable for automotive applications.

At PCIM Asia 2024, EPC showcased a humanoid robot sample. Some joint components in this robot are likely to adopt GaN. Additionally, EPC brought a driverless electric cart with a LiDAR component equipped with EPC’s GaN power devices.

Semikron Danfoss

According to Norbert Pluschke, Director of Solution and System Sales & Technical Director for Greater China at Semikron Danfoss, as one of the leading SiC module packaging manufacturers, Semikron Danfoss offers two packaging solutions specifically optimized for silicon carbide: The first is the full-bridge power module eMPack® platform, which features extremely low stray inductance (2.5nH), facilitating high switching speeds for SiC. The second is the DCM platform, a direct-cooled injection-molded half-bridge module developed for demanding automotive traction inverter applications, and this technology is also suitable for future GaN applications.

At the PCIM Asia 2024 exhibition, Semikron Danfoss showcased its solutions in the industrial energy and automotive sectors, including electric motor controller products for new energy vehicles from companies such as Citroën and EKPAC Power, utilizing eMPack® and DCM SiC modules.

Soitec

Gonzalo Picun, Business Development Manager at Soitec, stated that large-size silicon carbide (SiC) substrates, which can effectively improve the production efficiency of SiC power devices and reduce costs, are the key development trend of the current SiC industry. Meanwhile, many new material technologies have emerged, which can help improve material utilization efficiency. Additionally, Soitec also finds that various innovative SiC growth methods are developed, such as Physical Vapor Transport (PVT), Liquid Phase, and Chemical Vapor Deposition (CVD), which can help enhance the quality of SiC substrates. In this context, Soitec is actively developing high-quality material technologies, including large-size substrates.

Regarding capacity, Soitec’s new factory in Bernin, France, was completed in October 2023, with a total investment of 380 million euros (approximately 3 billion RMB) and covering an area of 2,500 square meters. Once fully operational in 2028, it can produce 500,000 wafers annually, with 80% being SmartSiC wafers. Technologically, Soitec possesses unique SmartCut™ technology, which can precisely cut SiC wafers, improving wafer yield and performance, and significantly increasing production output. Overall, Soitec has the strength to secure a significant place in the application of SiC in new energy vehicles (NEVs).

StarPower Semiconductor

StarPower Semiconductor has made swift progress in the automotive sector. According to Deputy General Manager Dr. Tang Yi, in 2022, StarPower Semiconductor became the first domestic company to mass-produce SiC modules for car manufacturers (used in the XPeng G9 model). In 2023, it began mass production and supply of its self-developed silicon carbide (SiC) chips. This year, StarPower Semiconductor’s self-built production line has also started supplying products, with applications covering main drive inverters, power supplies, and automotive air conditioning systems.

Domestic companies such as StarPower Semiconductor are continually advancing the adoption of SiC in automotive applications, competing with international giants.

While SiC power devices are rapidly integrating into automotive applications, GaN is also being actively promoted by major players. STMicroelectronics, Infineon, and onsemi are exploring both SiC and GaN automotive opportunities. STMicroelectronics’ SiC products have been or will be introduced into models from leading NEV manufacturers such as Li Auto and Great Wall Motors. Its PowerGaN series products are also suitable for electric vehicles and their charging facilities in higher power applications.

EPC has developed Time-of-Flight (ToF)/LiDAR reference designs based on GaN, utilizing GaN field-effect transistors (GaN FETs) to offer fast switching speeds, smaller footprints, high efficiency, and excellent reliability in LiDAR circuits. Currently, EPC’s eGaN FET has accumulated billions of hours of successful experience in automotive applications, including LiDAR and radar systems.

The application of GaN in the automotive field is still in its early stages, with mature applications in automotive LiDAR products, and it is gradually penetrating other automotive scenarios. By around 2025, GaN is expected to start small-scale penetration into low-power on-board chargers (OBCs) and DC-DC converters. Further into 2030, original equipment manufacturers (OEMs) might consider introducing GaN into main drive inverters.

Trends in Automotive Silicon Carbide/Gallium Nitride

Thanks to the collective efforts of Chinese domestic and international manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power devices, the global automotive industry, especially the new energy vehicle (NEV) sector, is undergoing revolutionary changes.

Currently, the NEV sector is transitioning from a 400V voltage system to an 800V voltage system. In the latest new-energy models released by major manufacturers, 800V high-voltage SiC platforms have almost become standard configuration. This transition mainly aims to enhance battery charging speed, reduce battery heating, improve motor efficiency, extend vehicle range, and lower manufacturing costs. In this process, SiC power devices play a crucial role.

In automotive applications, 1200V and even 1700V SiC power devices are becoming mainstream to better match the platform requirements of 800V or higher voltage levels.

This transition from 400V to 800V is also accelerating the popularization of NEVs. According to recent data from major NEV manufacturers, significant sales growth was achieved in August, and this growth trend is expected to continue, benefiting SiC power device manufacturers.

Additionally, with the advancement of the NEV industry, the demand for reducing energy loss and enhancing reliability is increasing, driving the need for more integrated SiC modules.

Summary

In recent years, advancements in synthesis technology and expanded production scale have driven the costs of SiC substrates and epitaxial layers downward, resulting in lower prices for related products such as devices and modules. This is favorable for further penetration into various application scenarios, especially the NEV field being massively adopted. Under the scale effect, price reduction further encourages automakers to promote SiC automotive adoption.

Simultaneously, the SiC industry is transitioning from 6-inch to 8-inch wafers. Although mainstream products are still 6 inches, the cost reduction and efficiency improvement of 8-inch wafers are significant, making it a focal point for manufacturers’ development. In the future, as 8-inch wafer capacity gradually increases, it is expected to further promote the widespread application of SiC in fields including NEVs and photovoltaic storage and charging.

Currently, SiC’s application in the NEV field is mostly concentrated in mid-to-high-end models. As costs and prices decrease, it is expected to gradually penetrate into low-to-mid-end NEV models, further enhancing its involvement in the NEV field.

Additionally, under the trend of industry integration, more and more SiC power device manufacturers are choosing to cooperate with NEV manufacturers to develop automotive SiC products. Guided by market and user needs, they are working from the front end of the industry chain to achieve customized technology and product development, shortening the process from R&D and verification to mass application, thereby achieving cost reduction and efficiency improvement while better seizing market opportunities.

Regarding GaN, in the NEV field, GaN devices currently mainly occupy applications below 400V. However, some manufacturers are promoting the high-voltage application development of GaN devices, including Bosch’s development of 1200V GaN technology for automotive use. In the future, GaN power devices will gradually expand from low-voltage automotive LiDAR applications to main drive inverters and other applications requiring higher voltage.

(Photo credit: TrendForce)

Over the past few years, major companies around the world have been investing in 8-inch SiC production lines, and these investments are now gradually becoming operational.

Global Layout: 14 New 8-Inch SiC Factories

In the global SiC market, companies such as STMicroelectronics (ST), Onsemi, Infineon, Wolfspeed, ROHM, BOSCH, Fuji Electric, Mitsubishi Electric, Vanguard International Semiconductor (VIS) and EPISIL, Silan Microelectronics, and UNT have all announced plans to build their own 8-inch SiC chip factories, as shown in the image. Many of these companies are also making strides in upstream substrate and epitaxial material segments.

STMicroelectronics (ST): ST announced on May 31 this year the construction of a new 8-inch SiC plant in Catania, Italy, consolidating all aspects of the SiC production process. The new plant is expected to start production in 2026 and reach full capacity by 2033, with a maximum capacity of 15,000 wafers per week and an estimated total investment of around 5 billion EUR.

The 8-inch silicon carbide (SiC) manufacturing plant in Chongqing, China, jointly established by ST and China’s Sanan Optoelectronics, will become ST’s third SiC production center. The project was announced on June 7, 2023, and is expected to begin production in the fourth quarter of 2025, with full completion anticipated by 2028.

Onsemi: Onsemi’s SiC wafer plant in Bucheon, South Korea, completed its expansion in 2023 and plans to transition to 8-inch production by 2025 after completing technology verification. By then, capacity will be expanded to 10 times the current scale.

Infineon: Announced on August 8, 2024, that the first phase of its 8-inch SiC power semiconductor wafer plant in Kulim, Malaysia, has officially started operations, with large-scale production expected by 2025.

Wolfspeed: Wolfspeed has the world’s first and largest 8-inch SiC plant located in Mohawk Valley, New York, which officially opened in April 2022. As of June this year, the factory has achieved a 20% wafer utilization rate.

In January 2023, Wolfspeed and automotive parts supplier ZF announced plans to build the world’s largest and most advanced 8-inch SiC device manufacturing factory in Saarland, Germany. This project has been delayed and is now expected to start at the earliest in 2025.

ROHM: Built a new SiC plant in Chikugo, Fukuoka Prefecture, Japan, which started mass production in 2022 and plans to transition from 6-inch to 8-inch wafer production by 2025. In July 2023, ROHM announced plans to start producing 8-inch SiC substrates at its second factory in Miyazaki Prefecture, Japan, by the end of 2024.

BOSCH: BOSCH’s factory in Reutlingen, Germany, started 6-inch SiC wafer production in 2021, with 8-inch SiC wafers currently also produced at this factory. The factory in Roseville, USA, is expected to start 8-inch SiC wafer production by 2026.

Mitsubishi Electric: Announced in late May this year that the 8-inch SiC plant in Kumamoto Prefecture, Japan, will be completed by September 2025, with production moved up to November 2025 from April 2026.

Fuji Electric: In January this year, Fuji Electric announced a 200 billion yen investment over the next three years (fiscal years 2024 to 2026) for SiC power semiconductor production, including an 8-inch SiC capacity at its Matsumoto factory in Japan, expected to start production in 2027.

UNT: Built its first 8-inch SiC MOSFET wafer production line in Yuecheng District, Shaoxing, and completed the engineering batch in April this year, with mass production expected next year.

Silan Microelectronics (Silan): Officially launched China’s first 8-inch SiC power device chip manufacturing line project in Xiamen on June 18 this year, with a total investment of 12 billion RMB.

The project will be built in two phases, with an annual production capacity of 720,000 8-inch SiC power device chips. The first phase investment is 7 billion RMB, expected to complete the initial connection by the end of the third quarter of 2025, with trial production in the fourth quarter and an annual yield target of 20,000 wafers. The second phase investment is about 5 billion RMB.

Vanguard International Semiconductor (VIS) & EPISIL: VIS announced on September 10 a plan to invest 2.48 billion NTD to acquire a 13% stake in EPISIL. The two companies will collaborate on the development and production of 8-inch SiC wafer technology, with mass production expected in the second half of 2026.

Thailand’s First SiC Factory: Recently, FT1 Corporation, a joint venture in Thailand, invested 11.5 billion THB (350 million USD) to build Thailand’s first SiC factory using technology transferred from a Korean chip manufacturer to produce 6-inch and 8-inch wafers. The factory is expected to start production in the first quarter of 2027 to meet the growing demand in automotive, data center, and energy storage markets.

Conclusion

From the aforementioned 14 SiC factory (12 under construction), only Wolfspeed’s Mohawk Valley plant can currently provide 8-inch SiC wafers in the short term. Other manufacturers are expected to start supplying 8-inch SiC wafers gradually from next year.