Over the past few years, major companies around the world have been investing in 8-inch SiC production lines, and these investments are now gradually becoming operational.

Global Layout: 14 New 8-Inch SiC Factories

In the global SiC market, companies such as STMicroelectronics (ST), Onsemi, Infineon, Wolfspeed, ROHM, BOSCH, Fuji Electric, Mitsubishi Electric, Vanguard International Semiconductor (VIS) and EPISIL, Silan Microelectronics, and UNT have all announced plans to build their own 8-inch SiC chip factories, as shown in the image. Many of these companies are also making strides in upstream substrate and epitaxial material segments.

STMicroelectronics (ST): ST announced on May 31 this year the construction of a new 8-inch SiC plant in Catania, Italy, consolidating all aspects of the SiC production process. The new plant is expected to start production in 2026 and reach full capacity by 2033, with a maximum capacity of 15,000 wafers per week and an estimated total investment of around 5 billion EUR.

The 8-inch silicon carbide (SiC) manufacturing plant in Chongqing, China, jointly established by ST and China’s Sanan Optoelectronics, will become ST’s third SiC production center. The project was announced on June 7, 2023, and is expected to begin production in the fourth quarter of 2025, with full completion anticipated by 2028.

Onsemi: Onsemi’s SiC wafer plant in Bucheon, South Korea, completed its expansion in 2023 and plans to transition to 8-inch production by 2025 after completing technology verification. By then, capacity will be expanded to 10 times the current scale.

Infineon: Announced on August 8, 2024, that the first phase of its 8-inch SiC power semiconductor wafer plant in Kulim, Malaysia, has officially started operations, with large-scale production expected by 2025.

Wolfspeed: Wolfspeed has the world’s first and largest 8-inch SiC plant located in Mohawk Valley, New York, which officially opened in April 2022. As of June this year, the factory has achieved a 20% wafer utilization rate.

In January 2023, Wolfspeed and automotive parts supplier ZF announced plans to build the world’s largest and most advanced 8-inch SiC device manufacturing factory in Saarland, Germany. This project has been delayed and is now expected to start at the earliest in 2025.

ROHM: Built a new SiC plant in Chikugo, Fukuoka Prefecture, Japan, which started mass production in 2022 and plans to transition from 6-inch to 8-inch wafer production by 2025. In July 2023, ROHM announced plans to start producing 8-inch SiC substrates at its second factory in Miyazaki Prefecture, Japan, by the end of 2024.

BOSCH: BOSCH’s factory in Reutlingen, Germany, started 6-inch SiC wafer production in 2021, with 8-inch SiC wafers currently also produced at this factory. The factory in Roseville, USA, is expected to start 8-inch SiC wafer production by 2026.

Mitsubishi Electric: Announced in late May this year that the 8-inch SiC plant in Kumamoto Prefecture, Japan, will be completed by September 2025, with production moved up to November 2025 from April 2026.

Fuji Electric: In January this year, Fuji Electric announced a 200 billion yen investment over the next three years (fiscal years 2024 to 2026) for SiC power semiconductor production, including an 8-inch SiC capacity at its Matsumoto factory in Japan, expected to start production in 2027.

UNT: Built its first 8-inch SiC MOSFET wafer production line in Yuecheng District, Shaoxing, and completed the engineering batch in April this year, with mass production expected next year.

Silan Microelectronics (Silan): Officially launched China’s first 8-inch SiC power device chip manufacturing line project in Xiamen on June 18 this year, with a total investment of 12 billion RMB.

The project will be built in two phases, with an annual production capacity of 720,000 8-inch SiC power device chips. The first phase investment is 7 billion RMB, expected to complete the initial connection by the end of the third quarter of 2025, with trial production in the fourth quarter and an annual yield target of 20,000 wafers. The second phase investment is about 5 billion RMB.

Vanguard International Semiconductor (VIS) & EPISIL: VIS announced on September 10 a plan to invest 2.48 billion NTD to acquire a 13% stake in EPISIL. The two companies will collaborate on the development and production of 8-inch SiC wafer technology, with mass production expected in the second half of 2026.

Thailand’s First SiC Factory: Recently, FT1 Corporation, a joint venture in Thailand, invested 11.5 billion THB (350 million USD) to build Thailand’s first SiC factory using technology transferred from a Korean chip manufacturer to produce 6-inch and 8-inch wafers. The factory is expected to start production in the first quarter of 2027 to meet the growing demand in automotive, data center, and energy storage markets.

Conclusion

From the aforementioned 14 SiC factory (12 under construction), only Wolfspeed’s Mohawk Valley plant can currently provide 8-inch SiC wafers in the short term. Other manufacturers are expected to start supplying 8-inch SiC wafers gradually from next year.

Recently, several 6-inch production lines have made significant advancements, focusing on third-generation semiconductor materials like silicon carbide (SiC) and gallium oxide (Ga2O3).

NEXIC Successfully Completes First Wafer Batch in Its Fab

On September 21, NEXIC announced that it had successfully completed the first wafer batch in its fab. NEXIC focuses on technological innovation and product development in SiC power devices and power modules, part of the third-generation semiconductors. The fab which located in Jiangyin, Jiangsu Province, China, began construction in August 2023, with equipment installation scheduled for August 2024.

Reports indicate that NEXIC’s 6-inch power semiconductor manufacturing project has a total investment of RMB 2 billion. The products can be widely used in electric vehicles, photovoltaic power generation, rail transit, and 5G communication. Once fully operational, the fab is expected to have an annual production capacity of 1 million wafers.

In June of this year, industry news revealed that NEXIC’s third-generation semiconductor power module R&D and production base project had signed an agreement to settle in Xidong New City, Wuxi, China. This project with a total investment of over RMB 1 billion, focuses on building an automotive-grade third-generation semiconductor power module packaging line, covering applications such as main drive systems, ultra-fast charging piles, photovoltaics, and industrial uses. The project is expected to begin production in 2025, with an annual output of approximately 1.29 million units and an estimated annual output value exceeding RMB 1.5 billion.

China’s First 6-Inch Gallium Oxide Monocrystalline and Epitaxial Wafer Growth Line Breaks Ground

On September 10, Fujia Gallium commenced construction of a 6-inch gallium oxide monocrystalline and epitaxial wafer growth line in Fuyang, Hangzhou.

Founded in 2019, Fujia Gallium is committed to the commercialization of ultra-wide bandgap semiconductor gallium oxide materials, focusing on the growth of gallium oxide monocrystals and the development, production, and sale of gallium oxide substrates and epitaxial wafers. Its products are mainly used in power devices, microwave RF, and optoelectronic detection.

It is reported that Fujia Gallium is currently the only company in China capable of both 6-inch monocrystal growth and epitaxy. This project marks the construction of China’s first 6-inch gallium oxide monocrystalline and epitaxial wafer growth line.

RIR’s 6-Inch Silicon Carbide Device Factory Completed with an Investment of INR 5.1 billion

On September 4, RIR Power Electronics Limited announced the completion of its silicon carbide semiconductor manufacturing plant in Odisha, India, with a total investment of INR 5.1 billion.

RIR is a subsidiary of the U.S.-based Silicon Power Group in India, specializing in the production of power electronic components. RIR’s product portfolio includes low to high-power devices and IGBT modules, serving industries such as energy, transportation, renewable energy, and defense.

In July 2023, Silicon Power Group announced the establishment of the SiC factory in Odisha, India, dedicated to producing 6-inch SiC wafers. The investment was made through its Indian subsidiary, RIR. In October 2023, RIR received approval from the Odisha state government to invest INR 5.108 billion in the project, which is expected to be fully operational by 2025.

In addition to RIR, Chennai-based SiCSem Private Limited announced in June its plans to establish a silicon carbide (SiC) manufacturing, assembly, testing, and packaging (ATMP) plant in Odisha, India.

On June 15, SiCSem signed a cooperation agreement with the Indian Institute of Technology Bhubaneswar (IIT-BBS) to collaborate on research in the compound semiconductor field. Their first joint project aims to localize SiC crystal growth at IIT-BBS, focusing on the mass production of 6-inch and 8-inch SiC wafers, with an estimated investment of INR 450 million (approximately RMB 38 million).

(Photo credit: Fujia Gallium)

As per a recent announcement by Nanjing Release, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully developed a key technology for the manufacturing of trench-type silicon carbide (SiC) MOSFET chip after four years of independent research. This breakthrough surpasses the performance limitations of planar SiC MOSFET chip, marking the first achievement of its kind in China.

SiC is one of the main representatives of wide bandgap semiconductor materials, characterized by its wide bandgap, high critical breakdown electric field, high electron saturation velocity, and high thermal conductivity. SiC MOSFET primarily comes in two structures: planar and trench, predominantly the former in current SiC MOSFET chip field.

Planar SiC MOS structure features simple process, good cell consistency, and relatively high avalanche energy. However, it faces the issue of JFET effect caused when current is confined to a narrow N-region near the P-body, which increases the on-resistance, and the large parasitic capacitance.

Trench structure refers to embedding the gate into the substrate to form a vertical channel, which allows for increased cell density, elimination of the JFET effect, optimal channel mobility, and significantly reduced on-resistance compared to planar structure. However, the trench process is more complex, with poorer cell consistency and lower avalanche energy.

“The key lies in the process,” explained Huang Runhua, Technical Director at the National Third-Generation Semiconductor Technology Innovation Center (Nanjing).

He noted that SiC is extremely hard, so converting from a planar to a trench structure means “digging a trench” in the material, which must be done with precision to avoid unevenness. During fabrication, the etching process’s precision, etching damage, and residual surface materials critically impact the development and performance of SiC devices.

To address these issues, the Innovation Center organized a core R&D team along with a full support team, and finally established a novel process flow following four years of continuous experimentation with new processes.

They overcame the challenges of precise, stable trench etching and successfully manufactured trench-type SiC MOSFET chip, improving conduction performance by about 30% compared to planar type.

The center is currently developing trench-type SiC MOSFET chip, with the goal of launching trench-type SiC power devices within a year, which are expected to be introduced to applications such as electric vehicle drivetrains, smart grids, photovoltaic energy storage.

What impact does this breakthrough have on our lives and the semiconductor industry? Huang explained, using electric vehicle as an example, that SiC power devices inherently offer power-saving advantages over silicon devices, potentially increasing lifespan by about 5%, and trench structure allows for designs with even lower resistance.

With the same conduction performance, this enables a higher-density chip layout, reducing chip usage costs.

Now, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has already started research on SiC superjunction devices. “This structure outperforms the trench-type structure and is currently under development,” Huang Runhua revealed.

Read more

• [News] A 8-Inch SiC Wafer Fab Co-Built by San’an and ST to Start Production Soon
• [News] ST to Build a New 8-Inch SiC Facility in Italy with EUR 5 Billion

(Photo credit: DRAMeXchange)

As per Chongqing News Broadcast, the San’an-ST project, with a total investment of approximately CNY 30 billion, is close to completion. The substrate factory is expected to start production this month, two months ahead of schedule.

The project, jointly developed by Chongqing San’an and ST, includes a chip factory and a substrate factory, focusing on the production of SiC power chips and substrates. The substrate factory, fully funded by San’an Semiconductor, is set to produce 480,000 8-inch SiC substrates annually.

The chip plant, a joint venture between San’an Semiconductor and ST, aims for an annual production capacity of 480,000 automotive-grade SiC MOSFET power chips.

San’an, through its wholly-owned subsidiary Hunan San’an, established Chongqing San’an for the substrate factory. The total investment for this factory is approximately CNY 7 billion, focusing on the growth and manufacturing of SiC substrates, with an annual production capacity of 480,000 8-inch SiC substrates.

San’an STMicroelectronics, a joint venture between Hunan San’an (51%) and ST (China) Investment (49%), was established in August 2023 with a registered capital of USD 612 million.

This chip factory has a total investment of USD 3.2 billion and aims for an annual revenue of CNY 13.9 billion, with an annual production capacity of 480,000 8-inch automotive-grade SiC MOSFETs.

San’an has disclosed that the project is currently in the critical stage of equipment installation and commissioning, and the substrate factory is expected to be ready for operation by the end of August, while the chip factory is projected to be fully operational by the end of November.

Read more

• [News] ST to Build a New 8-Inch SiC Facility in Italy with EUR 5 Billion
• [News] A Price War in SiC Wafer Sector seems to Start

(Photo credit: STMicroelectronics)

According to TrendForce’s “2024 Global GaN Power Device Market Analysis Report”, the development of the GaN power device industry is expected to accelerate once again as Infineon and Texas Instruments allocate more resources into GaN technology.

In 2023, the market size of global GaN power device was around USD 271 million, and it is projected to grow to USD 4.376 billion by 2030 at a compound annual growth rate (CAGR) of 49%.

Notably, the proportion of non-consumer applications is expected to increase from 23% in 2023 to 48% by 2030, with automobile, data center, and motor drive being the core application scenarios.

• GaN Expected to Make Great Difference in Reducing Heat and Improving Efficiency in AI Era

The evolution of AI technology has driven the continuous increase in computing power demand, making the power consumption of CPU and GPU an increasingly striking issue. To meet the requirements of more advanced AI computations, server power supply is required to further enhance efficiency and power density, and thus, GaN has emerged as a key solution.

Delta, the world’s largest server power supply provider, holds nearly 50% of the market share. Observing the advancement of its server power supplies, the power density has increased from 33.7W/in³ to 100.3W/in³ over the past decade, while power levels has reached 3.2kW and even 5.5kW, and the next generation is expected to exceed 8kW.

TrendForce’s research indicates that AI server is expected to account for 12.2% of overall server shipment in 2024, an increase of ~3.4% from 2023, while the annual growth rate for general server shipment is only 1.9%.

In face of such an attractive opportunity, both Infineon and Navitas Semiconductor have announced technical roadmaps for AI data center this year.

Infineon highlights the significant advantages of combining liquid cooling technology with GaN at lower junction temperature, which will enable data center to maximize efficiency, meet the growing power demands, and overcome the challenges posed by server heat increase.

• Potential of GaN’s High-Frequency Characteristics can be Fully Tapped in Motor Drive Applications

In motor drive applications like robotics, the potential of GaN is gradually emerging. Compared to industrial robots, humanoid robots have a significantly higher degree of freedom (DoF), greatly increasing the demand for motor drivers.

It’s learned that the joint modules of humanoid robots bear the main tasks of exertion and braking. To achieve higher explosive power, motor drivers with high power density, high efficiency, and high responsiveness are needed. As a result, GaN has attracted market attention, especially in load-bearing areas like the legs.

Texas Instruments and EPC (Efficient Power Conversion) have been dedicated to driving GaN’s application in the motor drive field, drawing new players into the market.

Robotics is expected to embrace a future beyond imagination, where precise, fast, and powerful motion capabilities are crucial, and the motors driving these movements will inevitably advance forward, which will be a boon for GaN.

• GaN Provides New Solutions for Automotive Power Electronics

While SiC thrives in the automotive industry, GaN is also gaining traction in this field, with on-board chargers (OBC) considered the best entry point.

The first automotive-grade GaN power product meeting AEC-Q101 standard was released by Transphorm (now Renesas) in 2017, and several manufacturers have since introduced a wide range of automotive-grade products so far.

Overall, although GaN still faces several technical challenges in entering inverter and OBC power system, it is believed that with continuous investment from major automotive chip companies like Infineon and Renesas, GaN will soon become a key component in automotive power systems.

• Consumer Electronics Remain the Main Applications for GaN

Consumer Electronics still holds the biggest proportion among GaN power device applications, in which GaN’s footprint is quickly expanding from fast chargers to home appliances and smartphones.

Specifically, GaN has been widely adopted in low-power smartphone fast chargers, and next will enter into more demanding applications like notebook and home appliance power supplies. Other potential consumer applications include Class-D audio, smartphone over-voltage protection (OVP), etc.

TrendForce believes that GaN power device industry is at a critical breakthrough moment, with several potential applications simultaneously boosting rapid growth.

Moreover, new structures and processes are expected to be introduced in built on better reliability to get into more complex high-power, high-frequency scenarios, injecting new momentum into the industry.

In terms of industry development and market landscape, Fabless companies have been particularly active in the past.

However, as the industry continues to consolidate and the application markets gradually open up, traditional IDM (integrated device manufacturer) giants are expected to gain significant influence, bringing new major changes to the future landscape of the industry.

Read more

• [News] Foundry Giant GlobalFoundries Acquired GaN-Related IP
• [News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon

(Photo credit: Infineon)