With Donald Trump’s victory in the U.S. presidential election, the whole semiconductor industry, especially those Asian-based tech giants making strides in overseas expansion, are concerned about the development of the U.S. CHIPS and Science Act.

According to the latest reports by Bloomberg and Business Korea, while TSMC has finalized binding agreements for multi-billion dollar grants and loans to back its U.S. factories, Samsung and SK hynix are both concerned that potential reductions in semiconductor subsidies could result from policy amendments.

Regarding who may be receive the funding from the Biden administration soon, another report by Reuters names TSMC, GlobalFoundries and at least one other chipmaker as the lucky ones.

The Reuters report further explains that the U.S. Commerce Department recently informed Congress that at least three companies are near receiving their final awards. Under the CHIPS Act, the Commerce Secretary is required to notify the relevant committees at least 15 days before finalizing any deal over USD 10 million, according to Reuters.

TSMC More Assured as Binding Agreements Reportedly Finalized

According to Bloomberg, the CHIPS Act allocated USD 39 billion in grants, along with additional billions in loans and 25% tax credits, aimed at revitalizing U.S. semiconductor manufacturing after years of production moving to Asia. At this moment, over 20 companies are in line to receive government funding, which suggests that it is highly probable that some of the funding will be finalized under Donald Trump’s leadership when he takes office in January, 2025.

Following Trump’s previous remarks that the CHIPS and Science Act is “so bad” and House Speaker Mike Johnson’s suggestion that Republicans may try to repeal the Act if they win Congress, industry officials are eager to finalize matters quickly, both to ensure that funds begin flowing to projects meeting established benchmarks, according to Bloomberg.

TSMC’s package, announced in April, includes USD 6.6 billion in grants and up to USD 5 billion in loans to aid the construction of three semiconductor factories in Arizona, with the total capital expenditure for the site amounting to more than USD 65 billion, according to its press release.

The deal, initially announced as tentative agreements earlier this year, comes as the Biden administration pushes to disburse funds before the end of its term in January, according to Bloomberg. Though it remains uncertain when the agreements will be officially signed and the incentives revealed, the award amounts are rumored to align with the preliminary agreements.

Samsung and SK hynix More Concerned about Direct Losses if Subsidies Are Not Granted

On the other hand, South Korean memory giants Samsung and SK hynix are more concerned that whether semiconductor subsidies may be reduced due to potential cuts to the U.S. CHIPS and Science Act.

Both companies are set to receive subsidies—around USD 6.4 billion in direct funding for Samsung and USD 3.87 billion for SK hynix—on the condition that they establish semiconductor manufacturing plants in the U.S.

However, an industry official cited by Business Korea stated that while the scale of the subsidies has been confirmed, the timing of the payments remains uncertain, which is worrisome. If the subsidies are not granted, it will result in direct losses.

Samsung had planned to invest USD 44 billion to build two semiconductor plants and an advanced packaging R&D center in Taylor, Texas. However, due to its current struggles, it has reportedly delayed construction and orders for the second foundry plant in Taylor.

Furthermore, concerns are also rising about the potential negative impact on semiconductor exports due to the U.S. government’s policies toward China. According to the Business Korea report, a reduction in Chinese finished product exports to the U.S. would likely cause a decline in sales for Korean companies that export intermediate goods, such as semiconductor equipment.

Not all news is bad news, though. An industry observer cited by Business Korea notes that although China is still unable to produce advanced process DRAM, they are quickly closing the gap in general semiconductor production. If Chinese memory companies face tighter regulations, it could lead to indirect advantages for their South Korean counterparts.

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• [News] With Trump’s Odds of Winning Rising, Concerns Arise on Potential Adjustments in Chip Subsidies
• [News] TSMC’s First Plant in Arizona Achieves Early Chip Production Yields Higher than Taiwan’s

(Photo credit: TSMC)

As South Korean memory giants Samsung and SK hynix announced their third quarter financial reports, posting a 112% and 94% year-over-year revenue growth, respectively, the threat from increasing output of Chinese rivals such as CXMT, which drives prices down, has reportedly prompted them to significantly cut back on legacy memory chip production, according to the report by the Korea Economic Daily.

According to the report, China’s ChangXin Memory Technologies (CXMT) has been ramping up the production of older chips like DDR4 and LPDDR4X, resulting in severe price pressure in legacy products.

CXMT has expanded its monthly DRAM production capacity from 40,000 wafer sheets in 2020 to 160,000 sheets. This capacity is expected to reach 200,000 sheets by year-end and 300,000 by the close of 2025, the report said.

SK hynix to Reduce DDR4 Production to 20% of Total DRAM Output

Industry sources cited by the report noted that in a recent investor relations session with Goldman Sachs, SK hynix suggested that it plans to reduce DDR4 DRAM production to 20% of its total DRAM output by the end of the year, down from 30% in September and 40% in June.

On the other hand, according to the report, in an earnings call with analysts on last week, Kim Jae-joon, executive vice president of Samsung’s device solutions (DS) division, confirmed plans to reduce production of legacy DRAM and NAND flash chips, aligning with industry expectations that chipmakers are scaling back on conventional memory output.

HBM and eSSD Emerge as the New Focus

Instead, both memory giants highlighted in their earnings call that they would shift their focus to highly profitable premium products like HBM and enterprise solid-drivers (eSSDs).

These adjustments by Samsung and SK hynix align with strong server DRAM demand driven by major tech firms like Google and China’s Baidu investing in server infrastructure, while PC DRAM sales have remained stagnant, according to the Korea Economic Daily.

According to SK hynix, as generative AI is developing into a multi-modal1 form and global big tech companies continue to invest to develop artificial general intelligence (AGI), the demand of memory for AI servers such as HBM and eSSD has grown noticeably this year. SK hynix predicts that this trend will continue next year.

According to the Korea Economic Daily, anticipating a prolonged global over supply, SK is accelerating the upgrade of its older DRAM lines in Wuxi, China, to advanced lines for producing fourth-generation 10-nanometer 1a DRAM.

While maintaining steady NAND flash production, in the meantime, SK is increasing the operation rate at its eSSD facility in Dalian, China, to nearly full capacity, according to sources cited by the report.

On the other hand, Samsung noted that in 2025, the company plans to expand the sales of HBM3E and the portion of high-end products such as DDR5 modules with 128GB density or higher for servers and LPDDR5X for mobile, PC, servers, and so on.

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• [News] SK hynix and Samsung Reportedly Step up Focus on HBM4 and CXL amid Rising Chinese Competition

(Photo credit: SK hynix)

While introducing the industry’s first 48GB 16-high HBM3E at SK AI Summit in Seoul today, South Korean memory giant SK hynix has reportedly seen strong demand for its next-gen HBM. According to reports by Reuters and South Korean media outlet ZDNet, NVIDIA CEO Jensen Huang requested SK hynix to accelerate the supply of HBM4 by six months.

The information was disclosed by SK Group Chairman Chey Tae-won earlier today at the SK AI Summit, according to the reports. In October, the company said that it planned to deliver the chips to customers in the second half of 2025, according to the reports.

When asked by ZDNet about HBM4’s accelerated timetable, SK hynix President Kwak Noh-Jung responded by saying “We will give it a try.”

A spokesperson for SK hynix cited by Reuters noted that this new timeline is quicker than their original target, but did not provide additional details.

According to ZDNet, NVIDIA CEO Jensen Huang also made his appearance in a video interview at the Summit, stating that by collaborating with SK hynix, NVIDIA has been able to achieve progress beyond Moore’s Law, and the company will continue to need more of SK hynix’s HBM in the future.

According to the third-quarter financial report released by SK hynix in late October, the company posted record-breaking figures, including revenues of 17.5731 trillion won, an operating profit of 7.03 trillion won (with an operating margin of 40%), and a net profit of 5.7534 trillion won (with a net margin of 33%) for the third quarter of this year.

In particular, HBM sales showed excellent growth, up more than 70% from the previous quarter and more than 330% from the same period last year.

SK hynix is indeed making strides in its HBM, as it started mass production of the world’s first 12-layer HBM3E product with 36GB in September. It has also been developing 48GB 16-high HBM3E in a bid to secure technological stability and plans to provide samples to customers early next year, according to the company’s press release.

On the other hand, according to another report by Business Korea, Kim Jae-jun, Vice President of the Memory Business Division, stated In the earnings call that the company is mass-producing and selling both HBM3E 8-stack and 12-stack products, and have completed key stages of the quality testing process for a major customer. Though Kim did not specify the identity of the major customer, industry analysts suggest it is likely NVIDIA.

To shorten the technology gap with SK hynix, Samsung is reportedly planning to produce the next-generation HBM4 products in the latter half of next year.

Read more

• [News] SK hynix Introduces World’s First 16-High HBM3E, Providing Samples in Early 2025
• [News] SK hynix Reportedly to Tape-out HBM4 in October, Paving the Way for NVIDIA’s Rubin

(Photo credit: NVIDIA)

South Korean memory giant SK hynix has introduced the industry’s first 48GB 16-high HBM3E at SK AI Summit in Seoul today, which is the world’s highest number of layers followed by the 12-high product, according to its press release.

According to SK hynix CEO Kwak Noh-Jung, though the market for 16-high HBM is expected to open up from the HBM4 generation, SK hynix has been developing 48GB 16-high HBM3E in a bid to secure technological stability and plans to provide samples to customers early next year, the press release noted.

In late September, SK hynix announced that it has begun mass production of the world’s first 12-layer HBM3E product with 36GB.

On the other hand, SK hynix is expected to apply Advanced MR-MUF process, which enabled the mass production of 12-high products, to produce 16-high HBM3E, while also developing hybrid bonding technology as a backup, Kwak explained.

According to Kwak, SK hynix’s 16-high products come with performance improvement of 18% in training, 32% in inference vs 12-high products.

Kwak Noh-Jung made the introduction of SK hynix’s 16-high HBM3E during his keynote speech at SK AI Summit today, titled “A New Journey in Next-Generation AI Memory: Beyond Hardware to Daily Life.” He also shared the company’s vision to become a “Full Stack AI Memory Provider”, or a provider with a full lineup of AI memory products in both DRAM and NAND spaces, through close collaboration with interested parties, the press release notes.

It is worth noting that SK hynix highlighted its plans to adopt logic process on base die from HBM4 generation through collaboration with a top global logic foundry to provide customers with best products.

A previous press release in April notes that SK hynix has signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced from 2026, through this initiative.

To further expand the memory giant’s product roadmap, it is developing LPCAMM2 module for PC and data center, 1cnm-based LPDDR5 and LPDDR6, taking full advantage of its competitiveness in low-power and high-performance products, according to the press release.

The company is readying PCIe 6th generation SSD, high-capacity QLC-based eSSD and UFS 5.0.

As powering AI system requires a sharp increase in capacity of memory installed in servers, SK hynix revealed in the press release that it is preparing CXL Fabrics that enables high capacity through connection of various memories, while developing eSSD with ultra-high capacity to allow more data in a smaller space at low power.

SK hynix is also developing technology that adds computational functions to memory to overcome so-called memory wall. Technologies such as Processing near Memory(PNM), Processing in Memory(PIM), Computational Storage, essential to process enormous amount of data in future, will be a challenge that transforms structure of next-generation AI system and a future of AI industry, according to the press release.

Read more

• [News] SK hynix Q3 Profits Hit Record, AI-Driven HBM to Reach 40% of DRAM Revenue in Q4
• [News] SK hynix Reportedly to Tape-out HBM4 in October, Paving the Way for NVIDIA’s Rubin

(Photo credit: SK hynix)

As HBM has become a key battlefield for memory giants amid the AI wave, NAND chips with more layers, which are also ideal for high-capacity solid-state drives (SSDs) used in AI data centers, are in great demand as well. According to the latest report by the Korea Economic Daily, Samsung aims to introduce the 400-layer vertical NAND by 2026 to capture a leading position in the booming AI-driven storage market.

According to the Korean media outlet, following Samsung’s current mass production of its 286-layer V9 NAND flash chips, the company’s Device Solutions division is targeting the production of vertical NAND with a minimum of 400 stacked layers as early as 2026.

Samsung’s major rival, SK hynix, is also developing 400-layer NAND, aiming to get the technology ready for mass production by the end of 2025, according to a report by etnews in August. The current HBM leader reportedly eyes the full-scale production for the 400-layer NAND to begin in the first half of 2026, which is roughly similar to Samsung’s timetable.

Samsung Develops “Dream NAND for AI” to Boost Density Per Unit Area by 1.6 Times

The report by the Korea Economic Daily notes that in conventional NAND chips, memory cells are stacked above the peripheral circuitry, which acts as the chip’s brain. However, stacking beyond 300 layers has frequently caused damage to the peripheral.

Back in 2013, Samsung was the industry’s first to introduce V NAND chips with vertically stacked storage cells to maximize capacity, the report notes.

Now, to address the issue occurred, Samsung is reportedly developing its advanced 10th-generation V NAND (V10), in which it intends to use an innovative bonding technology where cells and the peripheral circuitry are manufactured separately on distinct wafers before being bonded together.

Named by Samsung as bonding vertical NAND Flash or BV NAND, the technology is also praised by Samsung as the “dream NAND for AI,” stating that it will boost bit density per unit area by 1.6 times, according to the Korea Economic Daily.

This method is expected to support “ultra-high” NAND stacks by offering substantial storage capacity and efficient heat dissipation, which is ideal for SSDs used in AI data centers.

Roadmap for 1,000-layer NAND Revealed

Samsung is indeed ambitious as it also reveals the long-term roadmap for NANDs with more layers. According to the Korea Economic Daily, it plans to advance its stacking technology with the launch of V11 NAND in 2027, featuring a 50% increase in data input and output speed. Moreover, executives cited by the report state that the memory giant also aims to develop NAND with over 1,000 layers by 2030.

According to TrendForce’s latest research, in the second quarter of 2024, Samsung maintained its global leadership in the NAND Flash market with a 36.9% market share, up 0.2% from the previous quarter. SK Group followed with a 22.1% share, down 0.1%. Other key players include Kioxia (13.8%), Micron (11.8%), and Western Digital (10.5%).

Read more

• [News] SK hynix Reportedly Develops NAND over 400 Layers, Eyeing Mass Production Ready by 2025
• [News] Outpacing Samsung or the End of Race? Kioxia Aims 1000-layer NAND by 2027

(Photo credit: Samsung)