SK hynix announced today that it recorded 12.43 trillion won in revenues, 2.886 trillion won in operating profit (with an operating margin of 23%), and 1.917 trillion won in net profit (with a net margin of 15%) in the first quarter.

With revenues marking an all-time high for a first quarter and the operating profit a second-highest following the records of the first quarter of 2018, SK hynix believes that it has entered the phase of a clear rebound following a prolonged downturn.

The company said that an increase in the sales of AI server products backed by its leadership in AI memory technology including HBM and continued efforts to prioritize profitability led to a 734% on-quarter jump in the operating profit. With the sales ratio of eSSD, a premium product, on the rise and the average selling prices rising, the NAND business has also achieved a meaningful turnaround in the same period.

SK hynix forecasts the overall memory market to be on a steady growth path in coming months as demand for AI memory continues to rise, while the market for the conventional DRAM also starts to recover from the second half. Industry experts believe that inventories both at suppliers and customers will decrease as an increase in production of premium products such as HBM requires higher production capacities than conventional DRAM, resulting in a relative reduction in conventional DRAM supply.

(Photo credit: SK Hynix)

SK Hynix announced on April 24th that it plans to expand production capacity of the next-generation DRAM including HBM, a core component of the AI infrastructure, in response to the rapidly increasing demand for AI semiconductors.

As the board of directors approves the plan, SK Hynix will build the M15X fab in Cheongju, North Chungcheong Province, for a new DRAM production base, and invest about 5.3 trillion won for fab construction.

SK Hynix plans to start construction at the end of April with an aim to complete in November 2025 for an early mass production. With a gradual increase in equipment investment planned, the total investment in building the new production base will be more than 20 trillion won in the long-term.

With the advent of the AI era, the semiconductor industry believes that the DRAM market has entered a mid- to long-term growth phase. Along with HBM, which is expected to grow more than 60% annually, SK Hynix forecasts that demand for general DRAM will be on a steady rise led by high-capacity DDR5 module products for servers.

As HBM requires at least twice as large capabilities to secure the same production as general DRAM products, SK Hynix decided that increasing DRAM capabilities with a focus on HBM is a precondition for future growth.

The company plans to produce new DRAM from the M15X in Cheongju before the completion of the first fab in Yongin Semiconductor Cluster in the first half of 2027. Being located near the M15, which has been expanding TSV capabilities, the M15X is the best conditioned for optimization of HBM production.

Separately, SK Hynix will proceed with other domestic investments including the Yongin Semiconductor Cluster, where it will to inject approximately 120 trillion won, as planned.

The Yongin project is gaining speed with the process rate for groundwork marking 26%, which is 3% faster than the target. Major preparatory works including land compensation procedures and investigation of cultural properties have been completed, and construction of the infrastructure ranging from power and water to roads is also gaining speed. The company plans to start construction of the first fab in Yongin in March next year and complete it in May 2027.

(Photo credit: SK Hynix)

As AI semiconductor competition intensifies, the wafer foundry industry faces new challenges due to stagnant demand and excess capacity. The battle for dominance in the high-bandwidth memory (HBM) market is also escalating.

According to Business Korea, Samsung has extended the operation time of its Taylor plant from the end of 2024 to 2026, possibly adjusting the investment pace in consideration of the foundry market.

Regarding the global wafer foundry industry outlook for this year, TSMC President C.C. Wei stated that the growth of the global foundry industry this year has been revised from the previous earnings call of 20% to mid-teens.

Currently, TSMC’s two fabs in Arizona, USA, are scheduled to commence production in 2025 and 2028, respectively; the Kumamoto fab in Japan has started operations in February, and the second fab will start production before 2027. Intel, on the other hand, plans to establish new foundries in the United States, Europe, and Israel. The activation of these new fabs has raised concerns in the market about oversupply issues.

Contrastingly, in the HBM market, crucial for AI chips, SK Hynix and TSMC have formed an alliance, intensifying the competition between this alliance and Samsung.

SK Hynix announced on April 19th that the company has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced from 2026, through this initiative.

Looking at Samsung’s developments in the HBM, Samsung Electronics successfully developed the industry’s first highest-capacity 12-layer HBM3E in February, attempting to regain market dominance. In the second quarter, along with the 8-layer product, it will supply to Nvidia. The next goal is to launch the 16-layer HBM4.

Per TrendForce’s data, the three major HBM manufacturers held market shares are as follows: In 2023, SK Hynix and Samsung each held around 47.5%, while Micron’s share was roughly 5%. Still, forecasts indicate that SK Hynix’s market share in 2024 will increase to 52.5%, while Samsung’s will decrease to 42.4%.

In line with the same report from Business Korea, despite the decline in foundry demand, Samsung Electronics and SK Hynix’s profit prospects are expected to improve compared to last year.

As per estimates cited in the report from investment institutions, SK Hynix’s first-quarter revenue is expected to reach 12.1021 trillion won, with an operating profit of 1.7654 trillion won, and the operating profit for the entire year of 2024 is expected to exceed 21 trillion won; Samsung Electronics’ DS division’s performance is improving, with the first-quarter operating profit expected to be between 700 billion and 1.8 trillion won, and the overall operating profit for 2024 is expected to be around 35 trillion won.

(Photo credit: SK Hynix)

According to industry sources cited in a report from Business Korea, Japanese NAND Flash supplier Kioxia is preparing to restart its merger plan with its partner Western Digital (WD). However, SK Hynix, a major shareholder and Korean memory giant, continues to firmly oppose the merger.

The same report citing industry sources also indicates that Kioxia could potentially go public on the Tokyo Stock Exchange as early as October 2024, according to its schedule. Kioxia’s major shareholder, Bain Capital, a U.S. private equity firm, has engaged its creditor banks to review the listing process, with the banks providing over JPY 1 trillion in loans to support this effort.

Despite facing losses of JPY 254 billion from the second to fourth quarters of 2023 and the impending repayment of a JPY 900 billion loan in June 2024, Kioxia has seen improved market conditions in the memory market, leading to higher market quotations and increased revenue to address these financial challenges. This resurgence has prompted Kioxia to restart its merger plans with WD, with the backing of creditor banks supporting this initiative.

However, SK Hynix, which indirectly holds a 15% stake in Kioxia through a KRW 4 trillion investment in Bain Capital, has explicitly stated its opposition to restarting the merger between Kioxia and Western Digital. A representative from SK Hynix cited by the report from Business Korea stated that their position against the merger of Kioxia and WD remains unchanged. However, they are open to discussing potential cooperation under conditions that protect their investment interests.

In 2023, Kioxia and Western Digital had drafted a merger agreement that was blocked due to opposition from SK Hynix. The same report, citing industry sources, suggests that SK Hynix is expected to continue opposing the merger of the two companies. SK Hynix intends to leverage its advantages in the normalization of the NAND Flash market to maximize the gap in market conditions between itself and Kioxia/ WD as much as possible.

For the NAND Flash market, TrendForce’s report in march has indicated that, as of the fourth quarter of 2023, SK Group captures the global market with a share of 21.6%, followed by WD (14.5%) and Kioxia (12.6%).

Read more

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• NAND Flash Industry Revenue Grows 24.5% in Q4 2023, Expected to Increase Another 20% in Q1, Says TrendForce

(Photo credit: Western Digital)

South Korean memory giant SK Hynix announced today that it has recently signed a memorandum of understanding with TSMC for collaboration to produce next-generation HBM and enhance logic and HBM integration through advanced packaging technology. The company plans to proceed with the development of HBM4, or the sixth generation of the HBM family, slated to be mass produced from 2026, through this initiative.

SK Hynix said the collaboration between the global leader in the AI memory space and TSMC, a top global logic foundry, will lead to more innovations in HBM technology. The collaboration is also expected to enable breakthroughs in memory performance through trilateral collaboration between product design, foundry, and memory provider.

The two companies will first focus on improving the performance of the base die that is mounted at the very bottom of the HBM package. HBM is made by stacking a core DRAM die on top of a base die that features TSV technology, and vertically connecting a fixed number of layers in the DRAM stack to the core die with TSV into an HBM package. The base die located at the bottom is connected to the GPU, which controls the HBM.

SK Hynix has used a proprietary technology to make base dies up to HBM3E, but plans to adopt TSMC’s advanced logic process for HBM4’s base die so additional functionality can be packed into limited space. That also helps SK hynix produce customized HBM that meets a wide range of customer demand for performance and power efficiency.

SK Hynix and TSMC also agreed to collaborate to optimize the integration of SK Hynix’s HBM and TSMC’s CoWoS technology, while cooperating in responding to common customers’ requests related to HBM.

“We expect a strong partnership with TSMC to help accelerate our efforts for open collaboration with our customers and develop the industry’s best-performing HBM4,” said Justin Kim, President and the Head of AI Infra, at SK Hynix. “With this cooperation in place, we will strengthen our market leadership as the total AI memory provider further by beefing up competitiveness in the space of the custom memory platform.” 

“TSMC and SK Hynix have already established a strong partnership over the years. We’ve worked together in integrating the most advanced logic and state-of-the art HBM in providing the world’s leading AI solutions,” said Dr. Kevin Zhang, Senior Vice President of TSMC’s Business Development and Overseas Operations Office, and Deputy Co-Chief Operating Officer. “Looking ahead to the next-generation HBM4, we’re confident that we will continue to work closely in delivering the best-integrated solutions to unlock new AI innovations for our common customers.”

Read more

• [News] TSMC Q1 2024 Earnings Call Highlighted Two Major Revisions
• [News] SK Hynix Reportedly Invests USD 1 Billion in Advanced Packaging to Strengthen HBM Chip Leadership

(Photo credit: SK Hynix)