SK Hynix CEO Kwak Noh-Jung expressed optimism at the Consumer Electronics Show (CES) in the United States, stating that artificial intelligence (AI) chips would propel SK Hynix’s market value to double within three years, reaching KRW 200 trillion (approximately USD 152 billion).

Kwak also revealed plans to adjust the DRAM production reduction policy in the first quarter, while anticipating changes in NAND Flash production strategy in the latter half of the year.

At the CES exhibition in Las Vegas, Kwak emphasized that generative AI is gradually becoming widespread, and memories are increasingly crucial. With the advancement of AI systems, customer demands for memory will become more diverse. Kwak highlighted the development of a platform to offer customized options for various customers.

“If we prepare the products we are currently producing well, pay attention to maximising investment efficiency and maintaining financial soundness, I think we can attempt to double the current market capitalisation of 100 trillion won to 200 trillion won within three years,” Kwak said.

Kwak further stated in the CES: “There are only three HBM providers in the market. What I can say for sure is that SK Hynix is a clear leader in the HBM space.”

For the current HBM market, as reported by TrendForce earlier, SK hynix holds the lead in HBM3 production, serving as the principal supplier for NVIDIA’s server GPUs.

Samsung, on the other hand, is focusing on satisfying orders from other CSPs. The gap in market share between Samsung and SK hynix is expected to narrow significantly in 2023 due to an increasing number of orders for Samsung from CSPs. Both firms are predicted to command similar shares in the HBM market sometime between 2023 to 2024—collectively occupying around 95%.

Meanwhile, when asked if SK Hynix would ease its current chip production reduction policy, Kwak responded that the company’s policies are flexible and will be adjusted based on different product categories.

He mentioned that SK Hynix might change its DRAM production reduction policy in the first quarter, while adjustments for NAND Flash are anticipated to take place in the latter half of the year.

Read more

• [News] Samsung’s and SK Hynix’s Potential Expansion Plans Raise Concerns – Major Investments Anticipated Next Year

(Photo credit: SK Hynix)

Amid a gradual recovery in the memory market, South Korean memory giants Samsung and SK Hynix are reportedly set to expand their equipment investments significantly next year.

Samsung aims for a 25% increase in investment, while SK Hynix plans to more than double its investment compared to this year, concurrently increasing production capacity, sparking industry attention.

According to South Korean media outlet ETNEWS, both Samsung and SK Hynix are planning to boost semiconductor equipment investments in 2024. Samsung’s investment is estimated at around KRW 27 trillion (approximately USD 20.78 billion), representing a 25% growth, while SK Hynix plans an investment of around KRW 5.3 trillion (approximately USD 4.07 billion), signaling a 100% increase from this year’s investment.

As ETNEWS’ report revealed, in addition to increasing equipment investment, Samsung and SK Hynix have also raised their production capacity targets for 2024. Samsung plans to expand both DRAM and NAND Flash production by approximately 24%, while SK Hynix aims to elevate DRAM output to levels seen by the end of 2022.

Looking at market share, according to TrendForce’s released data, in terms of third-quarter revenue figures, Samsung holds approximately 38.9% market share in DRAM, while SK Hynix stands at 34.3%.

In the NAND segment, Samsung holds approximately 31.4% market share, while SK Hynix stands at 20.2%.

Market concerns arise as the memory industry, which has recently seen relief from the long-standing oversupply pressure due to major manufacturers reducing production, faces the possibility of disruption once again. Amid the rebound in prices, the significant investments planned by the two major South Korean companies are causing apprehension that the memory industry may face new challenges.

Memory industry sources believe that despite Samsung and SK Hynix’s plans to increase semiconductor equipment investment and boost production capacity in 2024, the tool-in still take time. Improving production capacity utilization is not an instantaneous process.

Furthermore, there is a general consensus in the industry that several AI-related applications in the future will require large-capacity memory support. For instance, the expected 3% growth in global smartphone shipments (based on TrendForce’s report) next year is anticipated to contribute to the expansion of demand in the high-value memory market.

TrendForce also pointed out that recent news about memory manufacturers expanding investment and increasing production capacity is primarily driven by the growing demand in the HBM market, rather than capacity expansion for all products.

Read more

• NAND Flash Industry Revenue Grows 2.9% in 3Q23, Expected to Surge Over 20% in Q4, Says TrendForce
• Contract Prices Bottom Out in Q3, Reigniting Buyer Momentum and Boosting DRAM Revenue by Nearly 20%, Says TrendForce

(Photo credit: Samsung)

South Korean President Yoon Suk Yeol concluded his visit to the Netherlands, announcing the establishment of a “Semiconductor Alliance” between South Korea and the Netherlands. The alliance involves collaboration between Dutch semiconductor equipment giant ASML and South Korean companies Samsung and SK Hynix. This marks South Korea’s first alliance announcement with a specific country.

According to the Korea Times and South Korean President Office’s press release on December 13th, President Yoon Suk Yeol’s held a dialogue with Dutch Prime Minister Mark Rutte during the state visit to the Netherlands. They issued a joint statement formalizing the “Semiconductor Alliance” and establishing bilateral mechanisms for economic, security, and industrial consultations.

On December 12th, President Yoon Suk Yeol led a delegation to ASML’s headquarters in the Netherlands, including representatives from South Korean semiconductor giants Samsung and SK Hynix, as reported by the Korea Times. During the visit, Samsung and ASML signed an MOU, jointly investing approximately KRW 1 trillion (about USD 7.6 billion) to establish a research fab in South Korea.

Bloomberg also reports that the new fab will expand ASML’s market in South Korea, where it already operates four fabs, servicing clients including Samsung. ASML’s exclusive EUV technology is crucial amid the US-China tech trade tensions, making regional diversification increasingly important for the company.

ASML is a leading global player of semiconductor EUV lithography systems, which is crucial for processing semiconductor manufacturing’s most vital steps. EUV equipment are a pivotal part of chip manufacturing, and ASML can produce only around 60 EUV devices annually. Currently, 70% of ASML’s EUV equipment are purchased by market leader TSMC.

Previous reports from South Korean media highlighted Samsung’s substantial EUV equipment purchases from ASML, totaling 50 units. Samsung is the world’s first company to produce 3nm chips, commencing production of the first-generation 3nm chips in the latter half of 2022. It aims to start mass production of the second-generation 3nm chips in the first half of the next year and targets producing 2nm chips by 2025 and 1.4nm chips by 2027.

(Image: 대한민국 대통령실)

According to TechNews’ report, in the midst of production cutbacks by Samsung, SK Hynix, and Micron, NAND Flash wafer prices are surging.

As the traditional peak season for end-user stockpiling comes to an end, memory module manufacturers wish to position themselves favorably during a dip in demand. However, the reduced supply resulting from production cutbacks paradoxically elevates the demand for NAND Flash, intensifying the momentum of price rebounds. Memory module manufacturers are left with no choice but to accept the price increases imposed by memory manufacturers.

Fueled by the expectation that memory manufacturers will continue to raise prices, memory module manufacturers continue aggressive purchasing, contributing to an upward price trend in December.

Major memory manufacturers Samsung, SK Hynix, and Micron had previously announced significant production reduction plans. Samsung initiated a decrease in NAND Flash production from the second quarter and further expanded the reduction to 50% of total capacity in September, focusing mainly on products with less than 128 layers. This move instilled confidence in price hikes among industry peers.

Due to the unexpectedly substantial reduction in production by major memory manufacturers, coupled with generally low inventory levels on the client side, NAND Flash prices continue to rise.

In the latter half of this year, the demand for Mobile DRAM and NAND Flash (eMMC, UFS) has not only been driven by the traditional peak season but also stimulated by the production expansion goals of other Chinese smartphone brands, including the Huawei Mate 60 series. This sudden influx of demand is contributing to the price hikes in fourth-quarter contracts.

The most significant price surge in this wave is undoubtedly in NAND Flash wafer prices. According to the latest research from TrendForce, the current industry situation indicates that module manufacturers’ inventories have rapidly depleted due to increased orders from customers. This has prompted module manufacturers to turn to memory manufacturers, requesting expanded supply.

However, with memory manufacturers persisting in their production reduction strategies, the imbalance between supply and demand has led to a robust rebound in NAND Flash wafer prices in the fourth quarter. According to TrendForce’s data, the month of November alone witnessed a price increase of over 25% for NAND Flash wafers.

Industry sources reveal that in the current scenario of limited supply and significantly increased demand, module manufacturers have no choice but to accept the forceful price hikes imposed by memory manufacturers. The industry, anticipating that memory manufacturers will continue to raise prices, has resulted in a situation where “Everyone just keeps scrambling for inventory.”

Based on the current market conditions, TrendForce believes that in December, with tight supply, NAND Flash prices will continue to rise. However, whether prices will continue to surge significantly in the first quarter next year depends on the production reduction strategies of NAND manufacturers and the state of demand.

It is reported that there are industry rumors suggesting that some memory manufacturers are considering increasing production capacity due to the strong downstream demand. If memory manufacturers decide to increase its capacity earlier, coupled with unclear improvements in demand, the extent of price increases may be noticeably limited.

(Photo credit: Samsung)

Market reports suggest Nvidia’s new product release cycle has shortened from two to a year, sparking intense competition among major memory companies in the realm of next-gen High Bandwidth Memory (HBM) technology. Samsung, SK Hynix, and Micron are fervently competing, with SK Hynix currently holding the dominant position in the HBM market. However, Micron and Samsung are strategically positioned, poised for a potential overtake, reported by TechNews.

Current Status of the HBM Industry

SK Hynix made a breakthrough in 2013 by successfully developing and mass-producing HBM using the Through Silicon Via (TSV) architecture. In 2019, they achieved success with HBM2E, maintaining the overwhelming advantage in the HBM market. According to the latest research from TrendForce, Nvidia plan to partner with more HBM suppliers. Samsung, as one of the suppliers, its HBM3 (24GB) is anticipated to complete verification with NVIDIA by December this year.

Regarding HBM3e progress, Micron, SK Hynix, and Samsung provided 8-layer (24GB) Nvidia samples in July, August, and October, respectively, with the fastest verification expected by year-end. All three major players anticipate completing verification in the first quarter of 2024.

As for HBM4, the earliest launch is expected in 2026, with a stack increase to 16 layers from the existing 12 layers. The memory stack will likely adopt a 2048-bit memory stack connection interface, driving demand for the new “Hybrid Bonding” stacking method. The 12-layer HBM4 product is set to launch in 2026, followed by the 16-layer product expected in 2027.

Navigating HBM4, the New Technologies and Roadmaps of Memory Industry Leaders

SK Hynix

According to reports from Business Korea, SK Hynix is preparing to adopt “2.5D Fan-Out” packaging for the next-generation HBM technology. This move aims to enhance performance and reduce packaging costs. This technology, not previously used in the memory industry but common in advanced semiconductor manufacturing, is seen as having the potential to “completely change the semiconductor and foundry industry.” SK Hynix plans to unveil research results using this packaging method as early as next year.

The 2.5D Fan-Out packaging technique involves arranging two DRAM horizontally and assembling them similar to regular chips. The absence of a substrate beneath the chips allows for thinner chips, significantly reducing the thickness when installed in IT equipment. Simultaneously, this technique bypasses the Through Silicon Via (TSV) process, providing more Input/Output (I/O) options and lowering costs. 

According to their previous plan, SK Hynix aims to mass-produce the sixth-generation HBM (HBM4) as early as 2026. The company is also actively researching “Hybrid Bonding” technology, likely to be applied to HBM4 products.

Currently, HBM stacks are placed on the interposer next to or GPUs and are connected to their interposer. While SK Hynix’s new goal is to eliminate the interposer completely, placing HBM4 directly on GPUs from companies like Nvidia and AMD, with TSMC as the preferred foundry.

Samsung

Samsung is researching the application of photonics in HBM technology’s interposer layer, aiming to address challenges related to heat and transistor density. Yan Li, Principal Engineer in Samsung’s advanced packaging team, shared insights at the OCP Global Summit in October 2023.

(Image: Samsung)

According to Samsung, The industry has made significant strides in integrating photonics with HBM through two main approaches. One involves placing a photonics interposer between the bottom packaging layer and the top layer containing GPU and HBM, acting as a communication layer. However, this method is costly, requiring an interposer and photon I/O for logic chips and HBM.

(Image: Samsung)

The alternative approach separates the HBM memory module from packaging, directly connecting it to the processor using photonics. Rather than dealing with the complexity of packaging, a more efficient approach is to separate the HBM memory module from the chip itself and connect it to the logic IC using photonics technology. This approach not only simplifies the manufacturing and packaging costs for HBM and logic ICs but also eliminates the need for internal digital-to-optical conversions in the circuitry. However, careful attention is required to address heat dissipation.

Micron

As reported by Tom’s Hardware, Micron’s 8-layer HBM3e (24GB) is expected to launch in early 2024, contributing to improved AI training and inference performance. The 12-layer HBM3e (36GB) chip is expected to debut in 2025.

Micron is working on HBM4 and HBM4e along with other companies. The required bandwidth is expected to exceed 1.5 TB/s. Micron anticipates launching 12-layer and 16-layer HBM4 with capacities of 36GB to 48GB between 2026 and 2027. After 2028, HBM4E will be introduced, pushing the maximum bandwidth beyond 2+ TB/s and increasing stack capacity to 48GB to 64GB.

Micron is taking a different approach from Samsung and SK Hynix by not integrating HBM and logic chips into a single die, suggested by Chinese media Semiconductor Industry Observation. This difference in strategy may lead to distinct technical paths, and Micron might advise Nvidia, Intel, AMD that relying solely on the same company’s chip carries greater risks.

(Image: Micron)

TSMC Aids Memory Stacking       

Currently, TSMC 3DFabric Alliance closely collaborates with major memory partners, including Micron, Samsung, and SK Hynix. This collaboration ensures the rapid growth of HBM3 and HBM3e, as well as the packaging of 12-layer HBM3/HBM3e, by providing more memory capacity to promote the development of generative AI.

(Image: TSMC)

(Image: SK Hynix)

Explore more

• Manufacturers Anticipate Completion of NVIDIA’s HBM3e Verification by 1Q24; HBM4 Expected to Launch in 2026, Says TrendForce
• [News] SK Hynix Signs Prioritized Supply Agreement with NVIDIA for HBM3e, 2023 Q4 Revenue Expected to Surpass KRW 10 Trillion Again
• [News] Memory Giants Samsung & Micron Actively Embrace DDR5 and HBM as Favorable Choices
• [News] Seizing the AI Trend! Revealing Samsung and Micron’s HBM Expansion Timetable
• Continuous Rise in HBM Demand, Memory Giants Expecting HBM4 Delivery in 2025