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    2024-01-18

    [News] TSMC’s Next-Gen Memory Breakthrough: Seizing Opportunities in AI and High-Performance Computing

    Semiconductors

    TSMC has achieved a breakthrough in next-generation MRAM memory-related technology, collaborating with the Industrial Technology Research Institute (ITRI) to develop a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip This SOT-MRAM array chip showcases an innovative computing ...

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