On July 1, GlobalFoundries (GF), a major foundry player, announced that it has acquired Tagore Technology’s production-verified proprietary GaN (Gallium nitride) power IP portfolio, which refers to a high-power density solution designed to enable higher efficiency and better performance of automobile, IoT, and AI data center applications where power supply is widely used.

Founded in January 2011, Tagore Technology focuses on developing GaN-on-Si (Gallium nitride on silicon) semiconductor technology for RF and power management applications.

As part of the acquisition, a team of veteran engineers from Tagore, dedicated to developing GaN technology, will join GF. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence,” said Niels Anderskouv, chief business officer at GF.

It is worth mentioning that in February 2024, GF received a direct subsidy of USD 1.5 billion under the US CHIPS and Science Act, with part of the funds allocated to the mass production of critical technologies, including GaN.

By combining this manufacturing capability with the technical expertise of the Tagore team, GF is well positioned to transform the efficiency of AI systems and enable lower power consumption particularly pivotal for edge or IoT devices.

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(Photo credit: GF)