Transphorm


2023-07-04

Global GaN Power Device Market Set to Soar, Reaching $1.33 Billion by 2026

According to TrendForce’s “2023 GaN Power Semiconductor Market Analysis Report – Part 1,” the global GaN power device market is projected to grow from $180 million in 2022 to $1.33 billion in 2026, with a compound annual growth rate of 65%.

The development of the GaN power device market is primarily driven by consumer electronics, with a focus on fast chargers as the core application. Other consumer electronic scenarios include Class D audio and wireless charging.

However, many manufacturers have already shifted their focus to the industrial market, with data centers being a key application. ChatGPT has sparked a wave of AI cloud server deployment, and GaN technology will help data centers reduce operating costs and improve server efficiency.

Simultaneously, the automotive market is also gaining attention, as OEMs and Tier 1 suppliers recognize the potential of GaN. It is expected that by around 2025, GaN will gradually penetrate low-power onboard chargers (OBC) and DC-DC converters. Looking further ahead to 2030, OEMs may consider incorporating GaN technology into traction inverters.

In terms of market competition, based on GaN power device business revenue, Power Integrations ranked first in 2022. The company has been leading the high-voltage market’s development since 2018, and its excellent GaN integrated solutions have gained wide market recognition. Other leading manufacturers include Navitas, Innosic, EPC, GaN Systems, and Transphorm.

Additionally, the industry paid attention to the acquisition of GaN Systems by Infineon. According to TrendForce’s statistics, the combined market share of both companies was approximately 15% in 2022.

Turning to the supply chain, as mentioned earlier, the development of the GaN power device market will be driven by consumer electronics for a long time. Therefore, the industry must pursue scale and low cost, necessitating the expansion of wafer sizes. Currently, mainstream GaN power wafers still rely on 6-inch silicon substrates, with only Innosic, X-FAB, and VIS offering 8-inch options. With a positive outlook for the long-term development of the GaN power market, several wafer manufacturers have announced plans to shift to 8-inch wafers in the coming years, including Infineon, STMicroelectronics, TSMC, and others.

Furthermore, Samsung recently announced its entry into the 8-inch market and plans to provide foundry services starting from 2025, a development worth industry attention.

(Photo credit: Navitas)

  • Page 1
  • 1 page(s)
  • 1 result(s)

Get in touch with us