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TSMC’s fab in Kikuyo, Kumamoto Prefecture, Japan (Kumamoto Fab 1) is expected to begin mass production by the end of 2024, with plans for a second fab in the region. Thus, the influence of TSMC’s presence continues to expand, as per the latest estimates from local financial institutions.
Over the next decade, from now until 2031, the economic spillover effect of TSMC’s operations in Kumamoto is projected to surpass 10 trillion yen, marking a 60% increase from a previous estimate in August 2023.
According to a report from Nikkei citing Kyushu Financial Group (Kyushu FG), a new impact estimate has been released on September 5, showing that TSMC’s operations in Kumamoto Prefecture are projected to generate an economic spillover effect of approximately JPY 11.2 trillion over the next 10 years, until 2031.
This marks a 60% increase from the previous estimate of JPY 6.9 trillion published in August 2023. The projected impact on Kumamoto Prefecture’s GDP over the same period has also risen from JPY 3.4 trillion to JPY 5.6 trillion.
Reportedly, the previous estimate from Kyushu FG last August only considered the benefits of TSMC’s Kumamoto Fab 1. The latest report, however, includes the planned construction of the Kumamoto Fab 2 in its evaluation.
The upward revision is attributed to the expanded magnetic pull of TSMC’s Kumamoto operations (both fabs). The number of companies expected to set up or invest in the region has increased to 171, roughly double the previous estimate.
Initially, the first Kumamoto fab attracted strong interest from suppliers like Sony and Mitsubishi Electric. Following TSMC’s announcement in February to build a second fab, further investments are expected, not only from within Kumamoto but also from other prefectures and overseas suppliers, particularly from Taiwan.
Additionally, the economic impact is expected to extend to wage levels in Kumamoto Prefecture, with an estimated increase of JPY 380,000 in per capita annual income.
Meanwhile, as stated in an report from Bloomberg on May 11th, Kumamoto’s newly appointed governor, Takashi Kimura, once claimed that he would spare no effort to persuade TSMC to establish a third fab in the region.
In addition, a recent report from Kyodo News citing the interview with Taiwanese Minister of Economic Affairs J.W. Kuo has also hinted that TSMC plans to build a third fab in Japan, but with a projected timeline after 2030.
If the third fab is realized, the economic spillover effect is anticipated to expand further.
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(Photo credit: JASM)
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No eternal allies. No perpetual enemies. The old proverb seems so true when it comes to the semiconductor industry, when the world’s top foundry, TSMC, announced the collaboration with its rival Samsung, the second largest foundry globally, on the development of HBM4, according to the reports by Korean media outlets the Korea Economic Daily and Business Korea. According to analysts cited by the Korea Economic Daily, it would mark their first partnership in the AI chip sector.
Citing the remarks of Lee Jung-bae, Head of the Memory Business Division at Samsung Electronics at SEMICON Taiwan, the reports note that in order to advance in HBM, Samsung is preparing over 20 customized solutions in collaboration with various foundry partners. However, Lee declined to comment on which specific foundry they were partnering with.
The answer has been revealed when on September 5th, Dan Kochpatcharin, Head of Ecosystem and Alliance Management at TSMC, confirmed that the two companies are working together on developing a buffer-less HBM4 chip.
According to Business Korea, buffer-less HBM is a product that eliminates the buffer used to prevent electrical issues and manage voltage distribution, which Samsung targets to introduce with HBM4. The innovation is expected to enhance power efficiency by 40% and reduce latency by 10% compared to existing models.
The reports note that the main consideration Samsung chooses to team up with TSMC would be the attempt to incorporate customized features requested by major clients like NVIDIA and Google.
Although Samsung can offer a full range of HBM4 services, including memory production, foundry, and advanced packaging, the company aims to utilize TSMC’s technology to attract more clients, according to sources cited by the reports.
The manufacturing process for HBM4 differs from previous generations, with the logic die, the component that functions as the brain of an HBM chip, may now be produced by foundry companies rather than memory manufacturers.
Earlier in April, SK hynix, the current HBM leader as well as Samsung’s biggest rival on memory, announced the partnership with TSMC on HBM4 development and next-generation packaging technology.
Though months later than SK hynix and Micron, Samsung’s 8-layer HBM3e has reportedly started shipments to NVIDIA. It targets to gain a competitive edge with its rival in HBM4, eyeing to enter mass production by late 2025.
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(Photo credit: Samsung)
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Amid the rising of emerging applications in the AI market, the booming demands for high-performance computing (HPC), high-bandwidth memory (HBM), CoWoS advanced packaging, and high-performance storage, have energized the wafer foundry industry.
Given the broader applicability of 12-inch wafer in advanced process chips, the global expansion of 12-inch wafer production has accelerated in recent years. Leading companies like TSMC, Intel, UMC, Vanguard International Semiconductor (VIS), SMIC, and Huahong have successively released production capacity.
On September 4, VIS and NXP jointly announced the approval of their Singapore-based 12-inch wafer fab joint venture by regulatory authorities in Taiwan, Singapore, and other regions.
The joint venture, named VisionPower Semiconductor Manufacturing Company (VSMC), will begin construction of its first 12-inch (300mm) wafer fab in the second half of this year.
VIS estimates that trial production will begin in 2027, with profitability expected by 2029. TSMC will provide technological support, and the market holds a favorable long-term outlook for the company’s operations.
Upon its mass production, both companies may consider building a second fab. Currently, VIS operates five 8-inch fabs located in Taiwan and Singapore. Three of the 8-inch fabs are in Hsinchu, and one in Taoyuan. The average monthly capacity of its 8-inch fabs in 2023 was about 279,000 wafers.
On August 20, TSMC held a groundbreaking ceremony for its new German fab, ESMC, which is set to begin construction by the end of the year and aims to start production by the end of 2027.
The project involves an investment of over EUR 10 billion and is expected to have a monthly capacity of 40,000 12-inch wafers, utilizing TSMC’s 28/22nm planar CMOS and 16/12nm FinFET process technologies.
In early September, Taiwan’s Ministry of Economic Affairs announced that TSMC plans to build a third fab in Japan to produce advanced semiconductors, with construction expected after 2030.
TSMC’s first fab in Kumamoto, Japan, officially opened on February 24, 2023, and will begin mass production in Q4 this year using 28/22nm and 16/12nm process technologies, with a monthly capacity of 55,000 wafers.
The second fab in Kumamoto is planned, with construction expected to start by the end of this year and operations to begin by the end of 2027, targeting 6/7nm nodes.
Additionally, TSMC’s 2nm fabs in Hsinchu (Fab 20) and Kaohsiung (Fab 22) in Taiwan are scheduled to start mass production next year.
In the U.S., TSMC’s first fab in Arizona is scheduled to begin producing chips using 4nm technology in the first half of 2025. The second fab will produce both 3nm and 2nm chips using next-generation nanosheet transistors, with production starting in 2025.
Plans for a third fab are also underway, with production of chips using 2nm or more advanced processes expected to begin in 2028.
On May 21, UMC held a ceremony for the settlement of equipment at its expanded Fab 12i in Singapore with the arrival of the first equipment.
UMC has operated 12-inch fabs in Singapore for over 20 years, and in February 2022, it announced the plan to invest USD 5 billion to expand Fab 12i, adding a new 12-inch fab with a monthly capacity of 30,000 wafers, focusing on 22/28nm processes. Mass production is expected by early 2026.
On May 23, Toshiba Electronic Devices & Memory Corporation announced the completion of its new 300mm power semiconductor manufacturing fab, with a total investment of JPY 100 billion and plans to begin production in March 2025.
The fab will be built in two phases, with the first phase starting production within the 2024 fiscal year. Once fully operational, Toshiba’s power semiconductor capacity will be 2.5 times that of 2021. Equipment installation is underway, with mass production expected in the second half of FY2024.
On March 13, Powerchip held a groundbreaking ceremony for a 12-inch wafer fab in partnership with India’s Tata Group, located in Dholera, Gujarat, with a total investment of INR 910 billion rupees (about USD 11 billion).
The fab will have a monthly capacity of 50,000 wafers and will produce chips using 28nm, 40nm, 55nm, 90nm, and 110nm nodes.
In early May, Powerchip also announced plans for a new 12-inch fab to expand advanced packaging capacity to support growing demand for AI devices. Powerchip’s chairman stated that the company will provide interposers, one of the three components in CoWoS packaging technology.
Texas Instruments is currently expanding its 300mm capacity to meet future demand for analog and embedded processing chips. TI plans to invest USD 30 billion in building up to four interconnected fabs (SM1, SM2, SM3, SM4) in the coming decades.
According to its 2022 roadmap, TI will build six 300mm fabs by 2030, with RFAB2 in Richardson, Texas, and LFAB (acquired from Micron) already starting production in 2022 and 2023, respectively. Two of the Sherman fabs were completed in 2023, with two more planned for 2026-2030.
In addition to the plan mentioned above, TI also announced the plan for a second 300mm fab in Lehi, Utah in February 2023, adjacent to its existing 12-inch fab, with production estimated to begin in 2026, focusing on producing analog and embedded processing chips. These fabs will be combined into one once the construction is completed.
On August 16, Texas Instruments announced that it received USD 1.6 billion in funding from the U.S. CHIPS Act. This funding will be used to build a cleanroom for the SM1 fab and complete the pilot production line, construct a cleanroom for LFAB2 to begin initial production, and build the shell for the SM2 fab.
Intel has disclosed chip expansion plans in multiple regions, including Arizona, New Mexico, Ohio, Oregon, Ireland, Israel, Magdeburg, Malaysia, and Poland. However, due to market challenges and poor financial results, some of Intel’s expansion plans have been delayed.
Currently, Intel is advancing the construction of large semiconductor manufacturing plants in Arizona and Ohio for the production of cutting-edge semiconductors, as well as working on equipment development and advanced packaging projects at smaller facilities in Oregon and New Mexico.
On February 19, the U.S. government announced a USD 1.5 billion subsidy for GlobalFoundries. According to a preliminary agreement with the U.S. Department of Commerce, GlobalFoundries will establish a new semiconductor manufacturing facility in Malta, New York, and expand its existing Fab 8 plant in the same location.
The facility will leverage manufacturing technology already implemented in GlobalFoundries’ plants in Germany and Singapore to produce automotive chips, effectively introducing mature-node technology into Fab 8.
In February of this year, GlobalFoundries also announced a partnership with Amkor Technology to build a large packaging facility in Portugal.
It plans to transfer the 12-inch wafer-level packaging production line from its Dresden plant to Amkor’s facility in Porto, Portugal, aiming to establish Europe’s first large-scale backend facility. GlobalFoundries will retain ownership of the tools, processes, and IP transferred to Porto.
In China, companies like SMIC, Huahong, CR Micro (Shenzhen), and Zensemi (Guangzhou) are making new progresses in 12-inch wafer production.
SMIC expects its monthly 12-inch wafer capacity to increase by 60,000 by the end of the year.
Huahong is speeding up the construction of its new 12-inch fab in Wuxi, with the first lithography machine installed on August 22, aiming for production in 1Q24.
CR Micro’s 12-inch fab in Shenzhen has entered the stage of equipment installation and debugging, with production expected to start in late 2024.
Zensemi’s 12-inch wafer manufacturing production line has went into production.
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(Photo credit: TSMC)
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At the SEMICON Taiwan 2024, Samsung’s Head of Memory Business, Jung Bae Lee, stated that as the industry enters the HBM4 era, collaboration between memory makers, foundries, and customers is becoming increasingly crucial.
Reportedly, Samsung is prepared with turnkey solutions while maintaining flexibility, allowing customers to design their own basedie (foundation die) and not restricting production to Samsung’s foundries.
As per anue, Samsung will actively collaborate with others, with speculation suggesting this may involve outsourcing orders to TSMC.
Citing sources, anue reported that SK hynix has signed a memorandum of understanding with TSMC in response to changes in the HBM4 architecture. TSMC will handle the production of SK hynix’s basedie using its 12nm process.
This move helps SK hynix maintain its leadership while also ensuring a close relationship with NVIDIA.
Jung Bae Lee further noted that in the AI era, memory faces challenges of high performance and low energy consumption, such as increasing I/O counts and faster transmission speeds. One solution is to outsource the basedie to foundries using logic processes, then integrate it with memory through Through-Silicon Via (TSV) technology to create customized HBM.
Lee anticipates that this shift will occur after HBM4, signifying increasingly close collaboration between memory makers, foundries, and customers. With Samsung’s expertise in both memory and foundry services, the company is prepared with turnkey solutions, offering customers end-to-end production services.
Still, Jung Bae Lee emphasized that Samsung’s memory division has also developed an IP solution for basedie, enabling customers to design their own chips. Samsung is committed to providing flexible foundry services, with future collaborations not limited to Samsung’s foundries, and plans to actively partner with others to drive industry transformation.
Reportedly, Samsung is optimistic about the HBM market, projecting it to reach 1.6 billion Gb this year—double the combined figure from 2016 to 2023—highlighting HBM’s explosive growth.
Address the matter, TrendForce further notes that for the HBM4 generation base die, SK hynix plans to use TSMC’s 12nm and 5nm foundry services. Meanwhile, Samsung will employ its own 4nm foundry, and Micron is expected to produce in-house using a planar process. These plans are largely finalized.
For the HBM4e generation, TrendForce anticipates that both Samsung and Micron will be more inclined to outsource the production of their base dies to TSMC. This shift is primarily driven by the need to boost chip performance and support custom designs, making further process miniaturization more critical.
Moreover, the increased integration of CoWoS packaging with HBM further strengthens TSMC’s position as it is the main provider of CoWoS services.
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Jun He, Vice President of Advanced Packaging Technology and Service at TSMC, stated that 3D IC is a crucial method for integrating AI chip memory with logic chips.
According to a report from TechNews, regarding the development of 2.5D CoWoS advanced packaging, which integrates eight chiplets, TSMC will use the A16 advanced process to manufacture the chiplets, and integrated them with 12 HBM4, which is expected to be launched in 2027.
Reportedly, in his speech at the Semicon Taiwan 2024 “3D IC / CoWoS for AI Summit,” He noted that the global semiconductor market is projected to become a trillion-dollar industry by 2030, with HPC and AI being the key drivers, accounting for 40% of the market, which also make AI chips crucial drivers for 3D IC packaging.
The reasons customers choose to manufacture AI chips with 3D IC platform for multi-chiplet design would be related to their lower costs and reduced design transition burdens.
Jun He explained that by converting a traditional SoC+HBM design to a chiplet and HBM architecture, the new logic chip would be the only component that needed to be designed from scratch, while other components such as I/O and SoC can use existing process technologies. This approach reduces mass production costs by up to 76%.
Although the new architecture might increase production costs by 2%, the total cost of ownership (TCO) is improved by 22% due to these efficiencies, He noted.
However, 3D IC still faces challenges, particularly in increasing production capacity. Jun He emphasized that the key to enhancing 3D IC capacity lies in the size of the chips and the complexity of the manufacturing process.
Regarding chip size, larger chips can accommodate more chiplets, improving performance. However, this also increases the complexity of the process, which can be three times more challenging. Additionally, there are risks associated with chip misalignment, breakage, and failure during extraction.
To address these risk challenges, Jun He identified three key factors: tool automation and standardization, process control and quality, and the support of the 3DFabric manufacturing platform.
For tool automation and standardization, TSMC’s differentiated capabilities with its tool suppliers are crucial. With 64 suppliers now involved, TSMC has gained the ability to lead in advanced packaging tools.
In terms of process control and quality, TSMC utilizes high-resolution PnP tools and AI-driven quality control to ensure comprehensive and robust quality management. Finally, the 3DFabric manufacturing platform integrates 1,500 types of materials within the supply chain to achieve optimization.
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(Photo credit: TSMC)